Post Metal Etch Polymer Removal: A New CF4-Based Dry Plasma Process Sequence
p.255
p.255
Influences of Cleaning Conditions and Elapse after Etch on Via Resistance in Multi-Level Cu Interconnects
p.259
p.259
Post-Etch Cleaning Chemistries Evaluation for Low k-Copper Integration
p.263
p.263
Resist Strip and Cu Diffusion Barrier Etch in Cu BEOL Integration Schemes in a Mattson HighlandsTM Chamber
p.267
p.267
Corrosion Inhibaitors for Copper in Hydroxylamine-Based Chemistries Used for CMP and Post-CMP Cleaning
p.271
p.271
Tribological Characterization of Post-CMP Brush Scrubbbing
p.275
p.275
Defectivity Study of Cu Metallization Process by Dark- and Bright-Field Inspection
p.281
p.281
New Dry Tool after Cleaning of Low-k Dielectrics
p.287
p.287
Supercritical Carbon Dioxide Processing of Porous Methylsilsesquioxane(PMSQ) Low-k Dielectric Films
p.293
p.293
Corrosion Inhibaitors for Copper in Hydroxylamine-Based Chemistries Used for CMP and Post-CMP Cleaning
Abstract:
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Periodical:
Solid State Phenomena (Volume 92)
Pages:
271-274
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Online since:
May 2003
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© 2003 Trans Tech Publications Ltd. All Rights Reserved
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