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HomeSolid State PhenomenaSolid State Phenomena Vol. 92Post Metal Etch Polymer Removal: A New CF4-Based...

Post Metal Etch Polymer Removal: A New CF₄-Based Dry Plasma Process Sequence

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Ultra Clean Processing of Silicon Surfaces VI

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Periodical:

Solid State Phenomena (Volume 92)

Pages:

255-258

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.92.255

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Online since:

May 2003

Authors:

Maria Paola Pozzoli, Simona Petroni

Keywords:

Dry Clean, Polymer Removal, Solvent Reduction

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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