Paper Titles

Post-Etch Cleaning Chemistries Evaluation for Low k-Copper Integration
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Resist Strip and Cu Diffusion Barrier Etch in Cu BEOL Integration Schemes in a Mattson Highlands^TM Chamber
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Corrosion Inhibaitors for Copper in Hydroxylamine-Based Chemistries Used for CMP and Post-CMP Cleaning
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Tribological Characterization of Post-CMP Brush Scrubbbing
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Defectivity Study of Cu Metallization Process by Dark- and Bright-Field Inspection
p.281

New Dry Tool after Cleaning of Low-k Dielectrics
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Supercritical Carbon Dioxide Processing of Porous Methylsilsesquioxane(PMSQ) Low-k Dielectric Films
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Supercritical Carbon Dioxide Cleaning of Low-k Material
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Removal of Heavy Organics by Supercritical CO₂
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HomeSolid State PhenomenaSolid State Phenomena Vol. 92Defectivity Study of Cu Metallization Process by...

Defectivity Study of Cu Metallization Process by Dark- and Bright-Field Inspection

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Periodical:

Solid State Phenomena (Volume 92)

Pages:

281-286

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.92.281

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Online since:

May 2003

Authors:

Laureen Carbonell, Frank Holsteyns, Zsolt Tőkei, Lisa O'Reilly, Karen Maex, Paul W. Mertens

Keywords:

Copper (Cu), Defectivity, Diffusion Barrier, Seed Layer, Self-Anneal

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© 2003 Trans Tech Publications Ltd. All Rights Reserved

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