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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96

Solid State Phenomena Vols. 95-96

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96

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Table of Contents

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Paper Title Page

Influence of Hydrogen on the Formation of Interstitial Agglomerates in Silicon

Authors: T. Mchedlidze, Masashi Suezawa

129

High Resolution Deep Level Transient Spectroscopy of Hydrogen Interactions with Ion Implantation-Induced Defects in Silicon

Authors: J.H. Evans-Freeman, N. Abdulgader

135

Depth Resolved Defect Analysis by Micro-Raman Investigations of Plasma Hydrogenated Czochralski Silicon Wafers

Authors: Reinhart Job, Yue Ma, Yue Long Huang, Alexander G. Ulyashin, Wolfgang R. Fahrner, Marie France Beaufort, Jean François Barbot

141

Casting Technologies for Solar Silicon Wafers: Block Casting and Ribbon-Growth-on-Substrate

Authors: Andreas Schönecker, L.J. Geerligs, Armin Müller

149

Silicon Ribbons for Solar Cells

Authors: Juris P. Kalejs

159

Metal Content of Multicrystalline Silicon for Solar Cells and its Impact on Minority Carrier Diffusion Length

Authors: Andrei A. Istratov, Tonio Buonassisi, R.J. McDonald, A.R. Smith, R. Schindler, James Rand, Juris P. Kalejs, Eicke R. Weber

175

Carbon-Induced Twinning in Multicrystalline Silicon

Authors: Hans Joachim Möller

181

Light-Induced Degradation in Crystalline Silicon Solar Cells

Authors: Jan Schmidt

187

Estimation of the Upper Limit of the Minority-Carrier Diffusion Length in Multicrystalline Silicon: Limitation of the Action of Gettering and Passivation on Dislocations

Authors: Martin Kittler, Winfried Seifert

197

Minority Carrier Diffusion Lengths in Multi-Crystalline Silicon Wafers and Solar Cells

Authors: Daniela Cavalcoli, Anna Cavallini, Marco Rossi, Kristian Peter

205

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