Solid State Phenomena Vols. 95-96

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https://doi.org/10.4028/www.scientific.net/SSP.95-96

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Paper Title Page

Two Dimensional Interstitial Diffusion in Mesoscopic Structures

Authors: Filippo Giannazzo, Vito Raineri, S. Mirabella, D. De Salvador, E. Napolitani, F. Priolo

351

Kinetic Reaction of the Formation of the Platinum Related Complex at the Origin of the p-Type Doping Effect in Silicon

Authors: Wilfried Vervisch, Laurent Ventura, Bernard Pichaud, Gérard Ducreux, Frédéric Lanois, André Lhorte

361

A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon

Authors: Eddy Simoen, Cor Claeys, V.B. Neimash, A. Kraitchinskii, M. Kras'ko, V. Tischenko, V. Voitovych

367

Influence of Cobalt Contamination in the Measurement of Diffusion Length of Silicon Wafers

Authors: Nicolas Pic, Adrien Danel, Maria Luisa Polignano, Gianluca Salvà, Massimo Sardo, Stéphane Rey

373

High Temperature Electron Irradiation Effects in InGaAs Photodiodes

Authors: H. Ohyama, K. Takakura, K. Hayama, Toshio Hirao, Shinobu Onoda, Eddy Simoen, Cor Claeys

381

Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range

Authors: Pavel Hazdra, Volodymyr V. Komarnitskyy

387

Authors: Lyudmila I. Khirunenko, O.A. Kobzar, Yu.V. Pomozov, Mikhail G. Sosnin, N.A. Tripachko, Nikolay V. Abrosimov, H. Riemann

393

Radiation Hardening of Silicon for Detectors by Preliminary Irradiation

Authors: P.G. Litovchenko, D. Bisello, A. Candelori, A.P. Litovchenko, A.A. Groza, A.P. Dolgolenko, V.I. Khivrich, L.I. Barabash, V.F. Lastovetsky, L.A. Polivtsev, W. Wahl, J. Wyss

399

Computer Modelling of SiO₂ Precipitation in Cz-Si Doped with Nitrogen

Authors: A.A. Efremov, V.G. Litovchenko, A.V. Sarikov, Hans Richter, V.D. Akhmetov

405

First Principles Simulations of Extended Defects at Cubic SiC Surfaces and Interfaces

Authors: A. Catellani, G. Cicero, Giorgio Galli, Laurent Pizzagalli

415