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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96

Solid State Phenomena Vols. 95-96

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96

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Table of Contents

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Paper Title Page

Dislocation-Impurity Interaction in Silicon

Authors: Ichiro Yonenaga

423

Influence of Magnetic Field on Critical Stress and Mobility of Dislocations in Silicon

Authors: M. Badylevich, Yu.L. Iunin, Vitaly V. Kveder, Valeri I. Orlov, Yu. Osipyan

433

Dislocation Generation in Device Fabrication Process

Authors: Isabella Mica, Maria Luisa Polignano, G.P. Carnevale, Aldo Armigliato, R. Balboni, M. Brambilla, F. Cazzaniga, Giuseppe Pavia, V. Soncini

439

Microstructural and Electrical Properties of NiSi₂ Precipitates at Dislocations in Silicon

Authors: Michael Seibt, Vitaly V. Kveder

447

Electrical and Optical Properties of Dislocations Generated under Pure Conditions

Authors: Maurizio Acciarri, Simona Binetti, Olga V. Feklisova, E.A. Steinman, Eugene B. Yakimov

453

Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors

Authors: B.V. Petukhov

459

Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon

Authors: Valeri I. Orlov, Yu.L. Iunin, M. Badylevich, O. Lysytskiy, Hans Richter

465

Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods

Authors: P. Zaumseil, D. Krüger, R. Kurps, O.V. Fursenko, Peter Formanek

473

Capacitance-Transient Detection of X-Ray Absorption Fine Structure: A Possible Tool to Analyze the Structure of Deep-Level Centers?

Authors: Joerg Weber, J. Bollmann, S. Knack, V. Kotestki, H.E. Mahnke, E. Welter

483

Measurement of Nitrogen Concentration in Cz Silicon Crystals

Authors: N. Inoue, A. Hashimoto, K. Shingu, K. Masumoto

489

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