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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96

Solid State Phenomena Vols. 95-96

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96

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Table of Contents

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Paper Title Page

Gettering of Impurities in Hydrogen Implanted Nitrogen-Doped Silicon

Authors: I.V. Antonova, Andrzej Misiuk, Adam Barcz, Di Sheng Yang, V.P. Popov

565

Gettering of Oxygen onto Buried Defect Layer in Hydrogen Implanted Silicon Wafers after Low Temperature Surface Saturation by Oxygen and Vacuum Annealing

Authors: A.V. Frantskevich, Anis M. Saad, A.V. Mazanik, A.K. Fedotov, E.I. Rau, S.V. Chigir

571

Re-Dissolution of Gettered Iron Impurities in Czochralski-Grown Silicon

Authors: Peng Zhang, Andrei A. Istratov, Hele Väinölä, Eicke R. Weber

577

Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency

Authors: Hele Väinölä, Peng Zhang, Antti Haarahiltunen, Andrei A. Istratov, Eicke R. Weber

581

Ion Beam Induced Excess Vacancies in Si and SiGe and Related Cu Gettering

Authors: Reinhard Kögler, A. Peeva, An. Kuznetsov, J.S. Christensen, Bengt Gunnar Svensson, Wolfgang Skorupa

587

Internal Gettering Efficiency in p/p⁺ and p/p^- Silicon Epistructures

Authors: Cesare Frigeri, G. Borionetti, P. Godio, E. Gombia

593

Dopant Segregation on Cavities Induced by Helium Implantation: Impact of the Doping Level

Authors: Frédéric Cayrel, M. Leo Vincent, Daniel Alquier, Fuccio Cristiano, L. Ventura, Christiane Dubois, A. Claverie

599

Atomically Controlled Technology for Future Si-Based Devices

Authors: Junichi Murota, Masao Sakuraba, Bernd Tillack

607

Epitaxial Growth Due to Phase Separation of Disordered Eutectic Au:Si Alloys on Silicon

Authors: Yue Long Huang, Michael Seibt, Wolfgang Schröter

617

Application-Specific Wafer Reclaim

Authors: Hans-Martin Dudenhausen, Mike Fritzsche, Christiane Streit, Christian Reuss

623

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