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HomeSolid State PhenomenaSolid State Phenomena Vols. 95-96

Solid State Phenomena Vols. 95-96

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.95-96

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Paper Title Page

Simulation of Oxygen Contaminated Silicon Grain Boundaries in Cluster Approximation

Authors: Alex L. Pushkarchuk, A.K. Fedotov, S.A. Kuten

65

Optimized Parameters for Modeling Oxygen Nucleation in Silicon

Authors: Markus Zschorsch, Robert Hölzl, Herbert Rüfer, Hans Joachim Möller, Wilfried von Ammon

71

Oxygen Ion Bombardment for Local Oxide Formation in Si

Authors: D. Krüger, R. Kurps, Peter Formanek, G. Weidner

77

Nitrogen Diffusion and Interaction with Oxygen in Si

Authors: Vladimir V. Voronkov, Robert J. Falster

83

Structure and Electronic Properties of Nitrogen Defects in Silicon

Authors: R. Jones, I. Hahn, Jonathan P. Goss, Patrick R. Briddon, Sven Öberg

93

Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics

Authors: F. Sahtout Karoui, A. Karoui, George A. Rozgonyi, M. Hourai, Koji Sueoka

99

Processing and Characterization of 300 mm Argon-Annealed Wafers

Authors: Timo Müller, E. Daub, H. Yokota, R. Wahlich, P. Krottenthaler, Wilfried von Ammon

105

Thermal Stability of Oxygen Precipitates in Nitrogen-Doped Czochralski Silicon

Authors: De Ren Yang, Hong Jie Wang, Xuegong Yu, Xiang Yang Ma, Duan Lin Que

111

Nitrogen Out-Diffusion from Czochralski Silicon Monitored by Depth Profiles of Shallow Thermal Donors

Authors: Vladimir V. Voronkov, A.V. Batunina, G.I. Voronkova, Robert J. Falster

117

Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability

Authors: Leonard C. Feldman, G. Lüpke, N.H. Tolk

123

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