Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiС

Marianne E. Bathen; Hussein M. Ayedh; Lasse Vines; Ildiko Farkas; Erik Janzén; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/MSF.924.200

Paper Titles

Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
p.184

Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC
p.188

Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide
p.192

Optical Stressing of 4H-SiC Material and Devices
p.196

Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiС
p.200

Various Single Photon Sources Observed in SiC Pin Diodes
p.204

Dislocation Analysis of p Type and Insulating HPHT Diamond Seed Crystals
p.208

Influence of Dislocations to the Diamond SBD Reverse Characteristics
p.212

Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures
p.217

HomeMaterials Science ForumMaterials Science Forum Vol. 924Diffusion of the Carbon Vacancy in a-Cut and c-Cut...

Diffusion of the Carbon Vacancy in a-Cut and c-Cut n-Type 4H-SiС

Abstract:

The diffusion of the carbon vacancy (V_C) in n-type 4H-SiC has been studied using Deep Level Transient Spectroscopy (DLTS). Samples grown along two different crystallographic planes, (0001) or c-cut and (11-20) or a-cut, have been utilized. The samples were implanted with 4.0 MeV C ions to generate V_C’s and subsequently annealed at temperatures between 200 and 1500 °C. Following each annealing stage, concentration versus depth profiles of the V_C were obtained. The V_C is essentially immobile in both the c-cut and a-cut samples up to at least 1200 °C. The 1400 °C annealing stage, however, resulted in considerable migration, predominantly along the a-direction. Using half the difference in the Full Width at Half Maximum (FWHM) of the initial and diffused concentration profiles as a measure of the diffusion length, we deduced the diffusivity of the V_C at 1400 °C to be approximately (3.8±1.1)×10^-14cm²/s along the c-axis and (4.1±1.2)×10^-13 cm²/s along the a-axis, indicating a substantial anisotropy for the V_C diffusion in 4H-SiC.