Paper Titles
Observation of Dislocation Conversion in 4H-SiC Epitaxial Wafer by Mirror Projection Electron Microscopy
p.251
Monitoring of Substrate and Epilayer Surfaces by Mirror Projection Electron Microscope
p.255
Optical Discrimination of TSDs and TEDs in 4H-SiC Substrates and Epitaxial Layers by Phase Contrast Microscopy Method
p.259
Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy
p.263
Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment
p.268
Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers
p.272
Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping
p.276
Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes
p.280
Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability
p.284

Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment

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Abstract:

Direct observation of thermal gradient induced motion of basal plane dislocations by in-situ synchrotron X-ray topography imaging of PVT-grown 4H-SiC wafers subject to high temperature treatment has provided an opportunity to analyze the movement of dislocations. Dislocations with Burgers vector along the off-cut [11-20] direction were found to be the only dislocations involved in deformation during heat treatment and the segments of dislocations used for velocity measurements were found to be either pure screw comprised of both Si-and C-core partials or 60° dislocations comprised of purely Si cores. Using the kink-diffusion model, the activation energies for dislocation motion have been calculated from the velocity data for each of these dislocation types and found to be 3.28eV for pure screw and 2.21eV for 60° dislocation segments, respectively.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

268-271

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.268

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Online since:

July 2019

Authors:

Balaji Raghothamachar*, Yu Yang, Jian Qiu Guo, Michael Dudley

Keywords:

4H-SiC, Dislocation Velocity, Heat Treatment, In Situ Studies, X-Ray Topography

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© 2019 Trans Tech Publications Ltd. All Rights Reserved

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