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Gettering and Defect Engineering in Semiconductor Technology VI

Solid State Phenomena Volumes 47 - 48

• Papers
• Abstracts

• p1 Trends and Challenges for Advanced Silicon Technologies   [ 1 M ]
  Authors: C. Claeys, L. Deferm
• p17 Needs of Low Thermal Budget Processing in SiGe Technology   [ 1 M ]
  Authors: U. König, J. Hersener
• p33 History and Future of Semiconductor Wafer Bonding   [ 758 K ]
  Authors: U.M. Gösele, H. Stenzel, M. Reiche, T. Martini, H. Steinkirchner, Q.-Y. Tong
• p45 Building the Electron Superhighway: Back-End Processing and Simulation   [ 595 K ]
  Authors: F.H. Baumann
• p57 Role of Interstitial Atoms in Microscopic Processes on (113) and (001) Surfaces of Silicon   [ 417 K ]
  Authors: Jaroslaw Dąbrowski, H.J. Müssig, G. Wolff
• p65 Silicon Materials and Metrology: Critical Concepts for Optimal IC Performance in the Gigabit Era   [ 1 M ]
  Authors: Howard R. Huff, R.K. Goodall
• p97 Expected Limits for Manufacturing Very Large Silicon Wafers   [ 784 K ]
  Authors: W. v. Ammon
• p107 Diameter Effects on Grown-In Defects in CZ Crystal Growth   [ 507 K ]
  Authors: F. Uberti, K. Hagimoto
• p115 Silicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic Devices   [ 634 K ]
  Authors: Gerhard Pensl, T. Troffer
• p127 Multicrystalline Silicon for Solar Cells   [ 1 M ]
  Authors: Hans Joachim Möller