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Ion Implantation in Semiconductors

Solid State Phenomena Volumes 1 - 2

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• p203 Defects in SIMOX Structures   [ 288 K ]
  Authors: R.C. Barklie
• p211 A Review of Deep Levels in Donor-Ion Implanted GaAs   [ 1 M ]
  Authors: D.W.E. Allsopp
• p247 Ion Implantation in GaAs   [ 1 M ]
  Authors: S.J. Pearton
• p281 Rapid Isothermal Annealing of Ion Implanted Gallium-Arsenide   [ 2 M ]
  Authors: Sukhdev Singh Gill
• p343 Defects and Doping Effects in CdTe and CulnS₂ by Phosphorus Ion Implantation and Pulsed Electron Beam Annealing   [ 536 K ]
  Authors: H.Y. Ueng, H.L. Hwang
• p361 Implantation of Silicon in Indium Phosphide for Metal Insulator Semiconductor Transistors   [ 479 K ]
  Authors: N. Duhamel, G. Post, P. Krauz, P. Henoc, B. Descouts
• p371 Thermal Annealing of Be Implanted InSb   [ 332 K ]
  Authors: H. Alberts, R. Cilliers
• p377 Range of Various Implanted Ions in III-V Materials   [ 811 K ]
  Authors: Pierre-Noel Favennec, M. Gauneau, M. Salvi
• p417 The Compositional Disordering of AlGaAs/GaAs Superlattices by Si and Be Ion Implantation   [ 311 K ]
  Authors: Jyunji Kobayashi
• p429 Low-Energy Hydrogen-Ion Implantation in Zinc Oxide   [ 1 M ]
  Authors: G. Yaron, Y. Goldstein, A. Many
• p457 Optical Properties of Hydrogen-Implanted Semiconductors   [ 400 K ]
  Authors: Jakub Tatarkiewicz
• p465 Structure of Radiation Damage in Germanium Induced by Te+-Implantation Near Channeling Conditions   [ 651 K ]
  Authors: M.G. Kalitzova, D.S. Karpuzov, N.K. Pashov