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Gettering and Defect Engineering in Semiconductor Technology VI

Solid State Phenomena Volumes 47 - 48

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• p183 Defect Engineering for Silicon-on-Insulator, MeV Implantation and Low Temperature Processing   [ 687 K ]
  Authors: Sergei V. Koveshnikov, Anant K. Agarwal, K.L. Beaman, George A. Rozgonyi
• p195 Interactions between Dopants and End-of-Range Defects in Silicon   [ 535 K ]
  Authors: A. Claverie, C. Bonafos, A. Martinez, Daniel Alquier
• p205 Behaviour of the Size Distribution Function of End-of-Range Dislocation Loops during Silicon Oxidation   [ 288 K ]
  Authors: Michael Seibt, E. Spiecker
• p211 SiC Buried Layer Formation Induced by Ion Implantation   [ 248 K ]
  Authors: N.I. Klyui, D. Krüger, B.N. Romanyuk, V.G. Litovchenko, Hans Richter
• p217 The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources   [ 373 K ]
  Authors: E.A. Steinman, Vitaly V. Kveder, Hermann G. Grimmeiss
• p223 Critical Conditions for the Generation of the Misfit Dislocations during the Boron Diffusion in Silicon: Analytical Evaluation   [ 248 K ]
  Authors: F. Gaiseanu
• p229 Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments   [ 333 K ]
  Authors: Jan Vanhellemont, G. Kissinger, Paul Clauws, A. Kaniava, M. Libezny, Eugenijus Gaubas, Eddy Simoen, Hans Richter, C. Claeys
• p237 Point Defects in Semiconductors - Then and Now   [ 553 K ]
  Authors: Sokrates T. Pantelides
• p247 Oxygen Aggregation Phenomena in Silicon   [ 586 K ]
  Authors: R.C. Newman, M.J. Binns, Charalamos A. Londos, S.A. McQuaid, J.H. Tucker
• p259 New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics   [ 322 K ]
  Authors: Valentin V. Emtsev, Gagik A. Oganesyan, K. Schmalz
• p267 Hydrogen Passivation of Double Donors in Silicon   [ 503 K ]
  Authors: Yu.V. Martynov, I.S. Zevenbergen, T. Gregorkiewicz, C.A.J. Ammerlaan
• p275 Phosphorus Diffusion Induced Reconstruction of Defect Structure in Oxygen Precipitated Si   [ 293 K ]
  Authors: Eugene B. Yakimov, Isabelle Périchaud, Santo Martinuzzi
• p281 New Infrared Bands in Neutron-Irradiated Si   [ 207 K ]
  Authors: Charalamos A. Londos, G.I. Georgiou, L.G. Fytros, N. Sarlis
• p287 Iron Group Impurities in Semiconducting Iron Disilicide   [ 311 K ]
  Authors: K. Irmscher, W. Gelhoff, Y. Tomm, H. Lange
• p293 Fermi-Level Shifts Caused by Reactions of Intrinsic Defects at 450°C - 540°C in FZ- and Cz-Silicon Supersaturated with Platinum- An Electron Paramagnetic Resonance Study   [ 221 K ]
  Authors: J. Juda, M. Höhne