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Gettering and Defect Engineering in Semiconductor Technology VI

Volumes 47 - 48
doi: 10.4028/www.scientific.net/SSP.47-48
Paper Titles published in this Main Theme:
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Paper Title Page

Trends and Challenges for Advanced Silicon Technologies

Authors: C. Claeys, L. Deferm

1

Needs of Low Thermal Budget Processing in SiGe Technology

Authors: U. König, J. Hersener

17

History and Future of Semiconductor Wafer Bonding

Authors: U.M. Gösele, H. Stenzel, Manfred Reiche, T. Martini, H. Steinkirchner, Q.-Y. Tong

33

Building the Electron Superhighway: Back-End Processing and Simulation

Authors: F.H. Baumann

45

Role of Interstitial Atoms in Microscopic Processes on (113) and (001) Surfaces of Silicon

Authors: Jaroslaw Dąbrowski, Hans Joachim Müssig, G. Wolff

57

Silicon Materials and Metrology: Critical Concepts for Optimal IC Performance in the Gigabit Era

Authors: Howard R. Huff, R.K. Goodall

65

Expected Limits for Manufacturing Very Large Silicon Wafers

Authors: W. v. Ammon

97

Diameter Effects on Grown-In Defects in CZ Crystal Growth

Authors: F. Uberti, K. Hagimoto

107

Silicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic Devices

Authors: Gerhard Pensl, T. Troffer

115

Multicrystalline Silicon for Solar Cells

Authors: Hans Joachim Möller

127

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