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Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress
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Understanding the Influence of Different Parameters on the Dynamic VSD Behaviour of SiC MOSFETs during Power Cycling Test
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Design Space Exploration of SiC Power Module Package via Surrogate Model
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Dynamic HV-H³TRB Test on 3.3 kV SiC MOSFET Modules
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Resonance Damping Optimization in 1200V Power Modules with Planar SiC MOSFET Devices for 200 kW Output
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Power Cycle Failure Modes of 10 kV SiC-MOSFET Power Modules with Different Wire Bond Layouts
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Low-Inductance Packaging Design for SiC Power MOSFET Modules
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Design Space Exploration of SiC Power Module Package via Surrogate Model

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Abstract:

This study introduces a surrogate model-based optimization methodology to explore a wide design space of power module packages for achieving user-defined electromagnetic design objectives, such as minimizing commutation loop stray inductance, gate loop stray inductance and balancing mutual inductance. A half-bridge module with four parallel SiC devices per switch position is analyzed, incorporating 17 design variables across terminals and substrate dimensions. Using Sobol sampling, 4096 design variations were simulated in Ansys Q3D to train the surrogate model, enabling efficient gradient-based single- and multi-objective optimization. Results show that the proposed methodology significantly accelerates exploration in a wide design space and outperforms traditional expert-driven methods by identifying superior electromagnetic performance.

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Periodical:

Key Engineering Materials (Volume 1054)

Pages:

115-120

DOI:

https://doi.org/10.4028/p-av2Xg7

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Cite this paper

Online since:

May 2026

Authors:

Lu Wan*, Nicolo Ripamonti, Yan Fei Zhao, Reza Soleimanzadeh, Arne Schröder

Keywords:

Electromagnetic, Optimization, Packaging, Power Module, Surrogate Model

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Creative Commons CC BY 4.0

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* - Corresponding Author

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