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Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress

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Abstract:

This study investigates the degradation behavior of 1200 V 4H-SiC planar MOSFETs under negative high-temperature gate bias (HTGB) stress. The devices were stressed at −20 V and 150 °C for 1008 hours. Key electrical parameters, including threshold voltage (Vth) and reverse transfer capacitance (Crss), were monitored to evaluate time-dependent changes. The results reveal a clear two-phase degradation behavior characterized by a transition between electron-dominated and hole-dominated charge injection mechanisms. In the early stage, electron injection via Fowler–Nordheim (FN) tunneling causes a positive shift in Vth and a reduction in Crss. With prolonged stress, partial charge compensation leads to a reversal of the electrical trends. These results demonstrate a time-dependent transition between electron injection and hole injection mechanisms. The findings provide insight into the long-term reliability of planar SiC MOSFETs under negative HTGB stress.

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Periodical:

Key Engineering Materials (Volume 1054)

Pages:

91-97

DOI:

https://doi.org/10.4028/p-H2CsyY

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Online since:

May 2026

Authors:

Kung Yen Lee, Pei Chi Liao*, Tsai Pei Lu, Ruei Ci Wu, Pei Chun Liao, Sang Mo Koo, Yi Pin Lee

Keywords:

Fowler-Nordheim Tunneling, High-Temperature Gate Bias (HTGB), Hole Injection, Reliability, Reverse Transfer Capacitance (Crss), SiC MOSFET, Threshold Voltage (Vth)

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* - Corresponding Author

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