Paper Titles
Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Processing and Screening
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Cumulative Threshold Voltage Shift Induced by Surge Current in Planar SiC MOSFETs after Bipolar Gate Switching Stress
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Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress
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Understanding the Influence of Different Parameters on the Dynamic VSD Behaviour of SiC MOSFETs during Power Cycling Test
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Design Space Exploration of SiC Power Module Package via Surrogate Model
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Dynamic HV-H³TRB Test on 3.3 kV SiC MOSFET Modules
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Resonance Damping Optimization in 1200V Power Modules with Planar SiC MOSFET Devices for 200 kW Output
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Power Cycle Failure Modes of 10 kV SiC-MOSFET Power Modules with Different Wire Bond Layouts
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Low-Inductance Packaging Design for SiC Power MOSFET Modules
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Resonance Damping Optimization in 1200V Power Modules with Planar SiC MOSFET Devices for 200 kW Output

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Abstract:

Paralleling SiC MOSFETs in high-power modules introduces overvoltage and oscillation risks due to parasitic capacitances and inductances. This study presents a 200 kW EV inverter module co-designed at the device and packaging level to ensure switching reliability under harsh automotive conditions. At 800 V, the planar SiC MOSFET maintained stable gate voltage, while a benchmark trench device module experienced severe ringing and failure. Kelvin-source structures and internal gate resistors mitigated parasitic turn-on, and device-level optimizations—including a 0.5 µm foundry technology, silicide gate, and hexagonal cell layout—improved body-diode performance, together with the channel mobility, blocking voltage, and minimized on-resistance and switching losses. The resulting AEPR25B12C1STJN module demonstrated effective resonance damping, matched the performance of commercial trench module FS03MR12A6MA1B in static and dynamic tests, and achieved 98% AC efficiency with over 200 kW output at 150 °C junction temperature.

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Periodical:

Key Engineering Materials (Volume 1054)

Pages:

127-134

DOI:

https://doi.org/10.4028/p-eOEr1T

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Cite this paper

Online since:

May 2026

Authors:

Peter S. Ying*, Darwin Tsai, Alex Ma, George Wu, Akira Kamisawa, Shuichi Miyaoka, Nobuo Machida, Jimmy Wu

Keywords:

Damping, MOSFET, Output, Planar, Power, Power Module, Resonance, Silicon Carbide (SiC), Trench

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

[1] IET Power Electronics, Vol 15, Issue 11, Pages 989-1109 (2022).

Google Scholar

[2] https://www.rohm.com/products/sic-power-devices/sic-mosfet/sct4013dr-product.

Google Scholar

[3] https://www.xfab.com/technology/sic-gan#c2574.

Google Scholar

[4] Semicond. Technol. 43(3), 181–187 (2018).

Google Scholar

[5] https://www.alldatasheet.com/datasheet/INFINEON/FS03MR12A6MA1LB.

Google Scholar

[6] B.J. Baliga, "Fundamentals of Power Semiconductor Devices ", Springer-Scientific Press, New York, 2008.

Google Scholar

[7] Saeed Anwar, Zhiqiang (Jack) Wang, and Madhu Chinthavali, "Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures" 2018 IEEE Transportation Electrification Conference and Expo (ITEC) 13-15 June 2018.

DOI: 10.1109/itec.2018.8450223

Google Scholar