Paper Titles
Enhanced Gate Oxide Reliability in Vertical SiC Power MOSFETs via Optimized Processing and Screening
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Cumulative Threshold Voltage Shift Induced by Surge Current in Planar SiC MOSFETs after Bipolar Gate Switching Stress
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Degradation Mechanisms of 1200 V 4H-SiC Planar Power MOSFET under Negative HTGB Stress
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Understanding the Influence of Different Parameters on the Dynamic VSD Behaviour of SiC MOSFETs during Power Cycling Test
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Design Space Exploration of SiC Power Module Package via Surrogate Model
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Dynamic HV-H³TRB Test on 3.3 kV SiC MOSFET Modules
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Resonance Damping Optimization in 1200V Power Modules with Planar SiC MOSFET Devices for 200 kW Output
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Power Cycle Failure Modes of 10 kV SiC-MOSFET Power Modules with Different Wire Bond Layouts
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Low-Inductance Packaging Design for SiC Power MOSFET Modules
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Dynamic HV-H³TRB Test on 3.3 kV SiC MOSFET Modules

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Abstract:

In standard environmental reliability tests, Silicon Carbide (SiC) MOSFETs show a superior performance compared to their Silicon counterparts. This raises the question if the SiC modules are robust and reliable under all circumstances in the field and against all failure mechanisms or only in the standard laboratory tests. The HV-H³TRB (High Voltage – High Humidity High Temperature Reverse Bias) test is the standard test for humidity reliability and SiC modules survive this test for several thousand hours, easily surpassing the 1,000 h qualification requirement. However, in field service the devices are exposed to steep voltage slopes (high dv/dt) instead of the DC voltage stress applied in a standard HV-H³TRB. In this work, a dynamic HV-H³TRB test was performed on 3.3 kV SiC MOSFET modules for more than 4,000 h with switched high voltages of 80% Vnom, only observing minor degradations and reversible blocking capabilities.

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Periodical:

Key Engineering Materials (Volume 1054)

Pages:

121-126

DOI:

https://doi.org/10.4028/p-Tv6uJ9

Citation:

Cite this paper

Online since:

May 2026

Authors:

Jan Hendrik Peters*, Michael Hanf, Sven Clausner, Nando Kaminski

Keywords:

Dynamic H³TRB, Humidity, HV-H3TRB, Power Module, Reliability, SiC-MOSFET

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Creative Commons CC BY 4.0

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* - Corresponding Author

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