Preface
Calculation of the Whole Interface State Density Profile in SiO2/SiC Lateral MOSFETs
p.1
p.1
The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics
p.7
p.7
Investigation of the P-Body Effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET
p.15
p.15
High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction
p.21
p.21
Demonstration of Integrated 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic Temperatures
p.29
p.29
Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
p.37
p.37
Characteristics of High Current 4H-SiC Schottky Barrier Diodes
p.45
p.45
Design Optimization of 600V 4H-SiC Lateral Bi-Directional MOSFET (L-BiD-MOSFET) with 3D TCAD Simulation
p.51
p.51
Preface
Abstract:
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