Paper Titles
Investigation of the P-Body Effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET
p.15
High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction
p.21
Demonstration of Integrated 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic Temperatures
p.29
Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
p.37
Characteristics of High Current 4H-SiC Schottky Barrier Diodes
p.45
Design Optimization of 600V 4H-SiC Lateral Bi-Directional MOSFET (L-BiD-MOSFET) with 3D TCAD Simulation
p.51
Design of the Robust Edge Termination Applied to 4.5 kV SiC SBD Embedded MOSFET against Humidity
p.57
JTE-Based Termination Design and Technology Considerations for 1500 V 4H-SiC Superjunction MOSFETs
p.63
2x Current Boosting Scheme in 3300 v 4H-SiC VDMOSFET
p.69

Characteristics of High Current 4H-SiC Schottky Barrier Diodes

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Abstract:

Silicon carbide (SiC) Schottky barrier diodes (SBDs) have become critical components in power electronics due to their excellent high-voltage, high-temperature tolerance, and fast switching capability. However, increasing device area to improve current-carrying capability increases the total number of defects, which leads to an increase in reverse leakage current and reduces wafer yield. To improve current distribution uniformity within SiC module packaging, reduce system size and weight, and enhance the current-carrying capacity and high-temperature stability of a single SBD, this paper develops 750V/100A and 1200V/100A SiC SBDs on 6-inch wafers. For the 750V/100A device, the corresponding forward voltage (VF) at forward current (IF) of 100 A is 1.68 V. For the 1200V/100A device, the corresponding VF is 1.75V. Calculation based on the current voltage characteristics shows that the ideal factors of 750V/100A and 1200V/100A devices are 1.01 and 1.04, respectively, which are very close to 1. It demonstrates excellent Schottky contact and a high-quality interface. The devices exhibit high-temperature stability, meeting the demands of high-temperature applications.

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Periodical:

Key Engineering Materials (Volume 1055)

Pages:

45-50

DOI:

https://doi.org/10.4028/p-CFg0Cb

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Online since:

May 2026

Authors:

Lan Luo*, Yu Zhong, Peng Cui, Ziang Zhao, Lei Ge, Ying Xin Cui, Ming Sheng Xu, Xian Gang Xu, Ji Sheng Han, Yao Hao Wang

Keywords:

4H-SiC, High Current, Large-Area, SBD, Temperature

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Creative Commons CC BY 4.0

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* - Corresponding Author

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