Demonstration of Integrated 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic Temperatures

Abstract:

We have demonstrated an integrated 3.3 kV 4H-SiC vertical planar bidirectional (BD) conventional (Conv) power DMOSFET in common-drain (CD) configuration using two commercially available power DMOSFET dies and study its operation down to 77 K (-196 °C) to evaluate its cryogenic static and switching performance. The BD conduction and blocking are achieved down to 77 K. The measured specific on-resistance (R_ON,sp) of the BD MOSFET at room temperature (RT) is 26 mΩ-cm², approximately twice that of the unidirectional device. It increases by 54% when cooled to 77 K due to a substantial increase in channel and possibly JFET on-resistance components. In addition, the extracted specific switching losses (E_ON,sp and E_OFF,sp) increases by 33% (13%) at 195K (–77 °C) and by 83% (88%) at 77 K, relative to their RT values. These increases are primarily attributed to the substantial rise in R_ON,sp at 77 K. As a result, the implemented BD Conv DMOSFET exhibits degradation in both on-state and switching performance under cryogenic operation, driven mainly by the significant increase in channel and JFET resistance components.

• Periodical: Key Engineering Materials (Volume 1055)
• Pages: 29-36
• DOI: https://doi.org/10.4028/p-JFK9oG
• Online since: May 2026
• Authors: Zhao Wen He*, Giorgian Borca-Tasciuc, T. Paul Chow
• Keywords: 4H-SiC, Bidirectional, Cryogenic, High Voltage, Power MOSFET

References

[1] K. Hong et al., "Experimental investigations into temperature and current dependent on-state resistance behaviors of 1.2 kV SiC MOSFETs", IEEE Journal of the Electron Devices Society, no.7, pp.925-930, 2019.

DOI: 10.1109/jeds.2019.2937837

[2] S. Chen et al., "Cryogenic and high-temperature performance of 4H-SiC power MOSFETs", 28th Annual IEEE APEC, 2013, pp.1277-1283.

[3] S. Chowdhury et al., "Comparative evaluation of commercial 1200 V SiC power MOSFETs using diagnostic IV characterization at cryogenic temperatures", Mat. Sci. Forum, vol 897, pp.545-548, 2017.

DOI: 10.4028/www.scientific.net/msf.897.545

[4] Y. Wei et al., "Cryogenic performances comparisons among Si MOSFET, SiC MOSFET, cascode GaN, and GaN devices," IOP Conference Series: Materials Science and Engineering, vol. 1241, p.012042, 2022.

DOI: 10.1088/1757-899x/1241/1/012042

[5] K. Tian et al., "Comprehensive characterization of the 4H-SiC planar and trench gate MOSFETs from cryogenic to high temperature," IEEE Transactions on Electron Devices, vol. 66, no. 10, pp.4279-4286, Oct. 2019.

DOI: 10.1109/ted.2019.2934507

[6] J. Huber and J. W. Kolar, "Monolithic bidirectional power transistors," IEEE Power Electronics Magazine, vol. 10, no. 1, p.28–38, Mar. 2023.

DOI: 10.1109/mpel.2023.3234747

[7] C. Hitchcock and T. P. Chow, "Common-drain bidirectional 1200 V SiC MOSFETs," Materials Science Forum, vol. 1004, p.882–888, 2020.

DOI: 10.4028/www.scientific.net/msf.1004.882

[8] K. Han et al., "Monolithic 4-terminal 1.2 kV/20 A 4H-SiC bi-directional field effect transistor (BiDFET) with integrated JBS diodes," Proc. 32nd Int. Symp. Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, Sept. 2020, p.242–245.

DOI: 10.1109/ispsd46842.2020.9170064

[9] S. Chowdhury et al., "Operating principles, design considerations, and experimental characteristics of high-voltage 4H-SiC bidirectional IGBTs," IEEE Transactions on Electron Devices, vol. 64, no. 3, p.888–896, Mar. 2017.

DOI: 10.1109/ted.2016.2631241

[10] S. Chowdhury et al., "Characteristics of 4H-SiC P-i-N diodes on lightly doped free-standing substrates," Proc. 27th Int. Symp. Power Semiconductor Devices and ICs (ISPSD), May 2015, p.353–356.

DOI: 10.1109/ispsd.2015.7123462

[11] P. Steinmann et al., "Temperature dependence of avalanche breakdown in 4H-SiC devices," Journal of Applied Physics, vol. 133, no. 23, p.235705, 2023.

DOI: 10.1063/5.0187982

[12] Z. He et al., "Comparative performance evaluation and analysis of high voltage superjunction, charge-balanced, and conventional 4H-SiC DMOSFETs at cryogenic and high temperatures," Proc. 37th Int. Symp. Power Semiconductor Devices and ICs (ISPSD), 2025.

DOI: 10.23919/ispsd62843.2025.11118171

[13] Z. He et al., "Experimental demonstration and analysis of 4.5 kV bidirectional superjunction power DMOSFETs in 4H-SiC," Proc. 37th Int. Symp. Power Semiconductor Devices and ICs (ISPSD), 2025.

DOI: 10.23919/ispsd62843.2025.11117509

[14] Z. He et al., "Experimental comparative demonstrations and analysis of 3.3 kV 4H-SiC common-drain and common-source bidirectional charge-balanced power DMOSFETs switching," Proc. 36th Int. Symp. Power Semiconductor Devices and ICs (ISPSD), 2024, pp.140-143.

DOI: 10.1109/ispsd59661.2024.10579670

[15] R. Ghandi et al., "Scalable ultrahigh voltage SiC superjunction device technologies for power electronics applications," Proc. IEEE Int. Electron Devices Meeting (IEDM), San Francisco, CA, USA, pp.9-1.

DOI: 10.1109/iedm45625.2022.10019368

[16] S. Kagamihara et al., "Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC," J. Appl. Phys., vol. 96, no. 23, pp.5601-5606, 2004.

DOI: 10.1063/1.1798399

[17] Cheng et al., "Cryogenic and high temperature performance of 4H-SiC vertical junction field effect transistors (VJFETs) for space applications," Proc. 17th Int. Symp. Power Semiconductor Devices and ICs (ISPSD), Santa Barbara, CA, USA, 2005, pp.231-234.

DOI: 10.1109/ispsd.2005.1487993