Paper Titles
Preface
Calculation of the Whole Interface State Density Profile in SiO2/SiC Lateral MOSFETs
p.1
The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics
p.7
Investigation of the P-Body Effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET
p.15
High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction
p.21
Demonstration of Integrated 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic Temperatures
p.29
Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
p.37
Characteristics of High Current 4H-SiC Schottky Barrier Diodes
p.45
Design Optimization of 600V 4H-SiC Lateral Bi-Directional MOSFET (L-BiD-MOSFET) with 3D TCAD Simulation
p.51

High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction

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Abstract:

This paper reports on the comparative analysis of several 6.5 kV-rated 4H-SiC Junction Barrier Schottky integrated MOSFETs (JBSFETs) and 4H-SiC MOSFET to assess their forward conduction, 3rd quadrant behavior, and blocking characteristics. Among different JBSFET architectures, the Island P+ JBSFET achieved nearly identical specific on-resistance (Ron,sp) to the nominal MOSFET while delivering superior 3rd quadrant conduction and maintaining a high breakdown voltage. Further optimization of Schottky width demonstrated a trade-off between leakage suppression and 3rd quadrant conduction efficiency that underscores the Island P+ JBSFET’s potential as a reliable high-voltage SiC power device for next-generation applications.

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Periodical:

Key Engineering Materials (Volume 1055)

Pages:

21-27

DOI:

https://doi.org/10.4028/p-6iQUYo

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Cite this paper

Online since:

May 2026

Authors:

Shariare Hossain Rabbi*, Justin Lynch, Stephen A. Mancini, Woongje Sung

Keywords:

3rd Quadrant Conduction, 4H-SiC, High Voltage, JBSFET, MOSFET, Power Devices

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Creative Commons CC BY 4.0

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* - Corresponding Author

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