Paper Titles

Calculation of the Whole Interface State Density Profile in SiO₂/SiC Lateral MOSFETs
p.1

The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics
p.7

Investigation of the P-Body Effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET
p.15

High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3^rd Quadrant Conduction
p.21

Demonstration of Integrated 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic Temperatures
p.29

Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
p.37

Characteristics of High Current 4H-SiC Schottky Barrier Diodes
p.45

Design Optimization of 600V 4H-SiC Lateral Bi-Directional MOSFET (L-BiD-MOSFET) with 3D TCAD Simulation
p.51

HomeKey Engineering MaterialsKey Engineering Materials Vol. 1055The Tunneling Field-Effect Transistor as Novel...

The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics

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Abstract:

With ever-increasing power conversion densities in electric power converters, the volume of the converter must shrink for a certain power rating, which in turn demands the reduction in size of the energy-storing passive component. Constant power rating of those systems and the reduction of size of passive components leads to a higher switching frequency of the semiconductor power switches. At high switching frequencies, dynamic losses in the power semiconductor device dominate the overall power losses. Consequently, novel device concepts that address dynamic power losses may be superior to conventional power devices, even though they might have a higher static on-state loss. In this paper, the concept of the power tunneling field-effect transistor (Power-TFET) employing tunneling between a highly p-type doped source region and a n-type accumulation channel is proposed and compared to an equivalent LDMOS in terms of static and dynamic losses. Devices fabricated in a 2 µm 4H-SiC technology are measured and compared to evaluate the viability of the Power-TFET device concept. The fabricated Power-TFET shows high-voltage blocking capability and has a switchable tunneling junction with on-and off-state, despite showing high on-state resistance due to the tunneling through the wide bandgap of 4H-SiC. The alternative of tunneling through a switchable Schottky barrier is simulatively explored to solve the high on-state resistance of the pn-junction based Power-TFET.

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Periodical:

Key Engineering Materials (Volume 1055)

Pages:

7-14

DOI:

https://doi.org/10.4028/p-jgTu1m

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Online since:

May 2026

Authors:

Jan Frederik Dick*, Jannik Schwarberg, Mathias Rommel, Jörg Schulze

Keywords:

High-Frequency Power Electronics, Power Semiconductor Device Concept, Power-TFET, TFET, Tunneling Transistor

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