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Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
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Characteristics of High Current 4H-SiC Schottky Barrier Diodes
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Design Optimization of 600V 4H-SiC Lateral Bi-Directional MOSFET (L-BiD-MOSFET) with 3D TCAD Simulation
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Design of the Robust Edge Termination Applied to 4.5 kV SiC SBD Embedded MOSFET against Humidity
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JTE-Based Termination Design and Technology Considerations for 1500 V 4H-SiC Superjunction MOSFETs
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2x Current Boosting Scheme in 3300 v 4H-SiC VDMOSFET
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Design Optimization of 600V 4H-SiC Lateral Bi-Directional MOSFET (L-BiD-MOSFET) with 3D TCAD Simulation

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Abstract:

This paper presents the fabrication and characterization of a cell-to-cell integrated SiC lateral bi-directional MOSFET (L-BiD-MOSFET), with blocking performance analyzed through correlation of experimental results and 3D TCAD simulations. The fabricated devices exhibit a breakdown voltage of 600 V, notably lower than the 900 V predicted by 2D simulations. To address this discrepancy, 3D TCAD simulations were performed, which identified electric field crowding at the finger edges as the dominant factor limiting the breakdown voltage. To mitigate this effect, an extended P-top edge design was introduced, which increases the simulated breakdown voltage by more than 10%. Experimental results on devices incorporating the proposed design confirm improved breakdown capability, demonstrating good agreement with simulations. These results highlight the importance of accurate 3D simulation for edge effects in lateral structures. Overall, the proposed design strategy provides valuable guidance for the development of high-performance lateral bi-directional SiC power devices.

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Periodical:

Key Engineering Materials (Volume 1055)

Pages:

51-56

DOI:

https://doi.org/10.4028/p-t04lTi

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Cite this paper

Online since:

May 2026

Authors:

Seung Yup Jang*, Skylar deBoer, Woongje Sung

Keywords:

3D TCAD Simulation, 4H-Silicon Carbide (SiC), Bi-Directional, Lateral, MOSFET

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Creative Commons CC BY 4.0

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* - Corresponding Author

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