Paper Titles
The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics
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Investigation of the P-Body Effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET
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High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction
p.21
Demonstration of Integrated 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic Temperatures
p.29
Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
p.37
Characteristics of High Current 4H-SiC Schottky Barrier Diodes
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Design Optimization of 600V 4H-SiC Lateral Bi-Directional MOSFET (L-BiD-MOSFET) with 3D TCAD Simulation
p.51
Design of the Robust Edge Termination Applied to 4.5 kV SiC SBD Embedded MOSFET against Humidity
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JTE-Based Termination Design and Technology Considerations for 1500 V 4H-SiC Superjunction MOSFETs
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Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration

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Abstract:

Several 1.2kV 4H-SiC Bi-Directional MOSFETs (BiD-MOS) design approaches were successfully fabricated and evaluated based on their electrical characteristics. Both monolithic integration design approaches exhibited negligible differences in conduction, blocking, and switching characteristics when compared to their 2-Chip counterpart. However, during the short-circuit withstand time testing, severe gate oscillations were observed in the 2-Chip design, which was not an issue present in either monolithic configuration. As a result of its robust electrical behavior, monolithic integration emerges as a promising design approach for developing efficient and reliable Bi-Directional Switches.

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Periodical:

Key Engineering Materials (Volume 1055)

Pages:

37-44

DOI:

https://doi.org/10.4028/p-2newLP

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Cite this paper

Online since:

May 2026

Authors:

Stephen A. Mancini*, Dai Xin Chen, Seung Yup Jang, Andrew Binder, Richard Floyd, Robert Kaplar, Jack Flicker, Adam Morgan, Xiao Qing Song, Woongje Sung

Keywords:

4H-Silicon Carbide (SiC), Bi-Directional MOSFET, Bi-Directional Switch, Common Drain, Design Approach, Monolithic Integration

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* - Corresponding Author

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