Paper Titles
Preface
Calculation of the Whole Interface State Density Profile in SiO2/SiC Lateral MOSFETs
p.1
The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics
p.7
Investigation of the P-Body Effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET
p.15
High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction
p.21
Demonstration of Integrated 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic Temperatures
p.29
Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
p.37
Characteristics of High Current 4H-SiC Schottky Barrier Diodes
p.45
Design Optimization of 600V 4H-SiC Lateral Bi-Directional MOSFET (L-BiD-MOSFET) with 3D TCAD Simulation
p.51

Investigation of the P-Body Effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET

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Abstract:

We have introduced a new 1200V 4H-SiC MOSFET as Wolfspeed's Gen4 MOSFET, which offers compatible Rds,on, improved dynamic switching energy losses, reduced Qrr, and enhanced short circuit withstand time performance. In this study, we examine the P-body effect resulting from multi-step ion implantation and its significant impact on both the static and dynamic characteristics of SiC MOSFETs, specifically focusing on body-diode reverse recovery, short circuit withstand time (Tscwt), and observed switching energy losses in the 1.2 kV 4H-SiC power MOSFETs within this Gen4 series. Our findings are expected to contribute valuable insights into optimizing the design and operation of SiC MOSFETs, ultimately supporting the needs of modern power electronic systems that demand greater performance and efficiency.

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Periodical:

Key Engineering Materials (Volume 1055)

Pages:

15-20

DOI:

https://doi.org/10.4028/p-1PUxT1

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Cite this paper

Online since:

May 2026

Authors:

Jeff Joohyung Kim*, Jae Hyung Park, Shane Stein, Daniel Lichtenwalner, Sei Hyung Ryu

Keywords:

4H-SiC MOSFET, Double Pulse Test, Qrr, Reverse Recovery, Short Circuit Withstand Time, Switching Energy Losses

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Creative Commons CC BY 4.0

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References

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