Paper Titles
Preface
Calculation of the Whole Interface State Density Profile in SiO2/SiC Lateral MOSFETs
p.1
The Tunneling Field-Effect Transistor as Novel Device Concept for High-Frequency Hard-Switching Power Electronics
p.7
Investigation of the P-Body Effect on Reverse Recovery and Static Characteristics of 1.2 kV 4H-SiC Power MOSFET
p.15
High-Voltage Performance Evaluation of 6.5 kV 4H-SiC JBSFET Architectures and MOSFET with Enhanced 3rd Quadrant Conduction
p.21
Demonstration of Integrated 3.3kV 4H-SiC Bidirectional Conventional DMOSFETs at Cryogenic Temperatures
p.29
Comparative Study of 1.2kV 4H-SiC Bi-Directional MOSFET (BiD-MOS) Design Approaches: 2-Chip vs Monolithic Integration
p.37
Characteristics of High Current 4H-SiC Schottky Barrier Diodes
p.45
Design Optimization of 600V 4H-SiC Lateral Bi-Directional MOSFET (L-BiD-MOSFET) with 3D TCAD Simulation
p.51

Calculation of the Whole Interface State Density Profile in SiO2/SiC Lateral MOSFETs

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Abstract:

Silicon carbide (SiC) has emerged as a leading material for high-power applications. However, the high density of interface states (Dit) at the SiO2/SiC interface still constrains the performance and reliability of MOSFET devices. In this work, lateral 4H-SiC MOSFETs subjected to post-deposition annealing (PDA) in nitric oxide (NO) of different durations were investigated through capacitance-voltage measurements, supported by an analytical model and an iterative MATLAB-based Dit extraction algorithm. The results demonstrate that NO PDA effectively reduces Dit not only near the conduction band edge but also towards the valence band, yielding improved channel mobility (µFE) and enhanced threshold voltage stability.

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Periodical:

Key Engineering Materials (Volume 1055)

Pages:

1-6

DOI:

https://doi.org/10.4028/p-9dcWT2

Citation:

Cite this paper

Online since:

May 2026

Authors:

Marco Zignale*, Patrick Fiorenza, Lucia Calcagno, Marina Antoniou, Filippo Giannazzo, Fabrizio Roccaforte

Keywords:

Dit, Interface States, MOSFET, SiC, Silicon Carbide

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* - Corresponding Author

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