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JTE-Based Termination Design and Technology Considerations for 1500 V 4H-SiC Superjunction MOSFETs

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Abstract:

A charge-imbalanced P-pillar distribution termination (D3) is proposed for 1500 V-class 4H-SiC superjunction (SJ) devices. By combining a junction termination extension (JTE)-based termination with gradually widened P-pillar spacing, the design effectively suppresses edge electric field crowding and enhances device reliability. TCAD simulations show that D3 achieves comparable blocking capability while exhibiting significantly improved robustness against charge imbalance, oxide charge density, and JTE dose deviations, demonstrating superior process margin and reliability. With relaxed process sensitivity and an efficient structure, D3 presents a promising approach for high-voltage 4H-SiC SJ device fabrication.

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Periodical:

Key Engineering Materials (Volume 1055)

Pages:

63-68

DOI:

https://doi.org/10.4028/p-Rd95Vt

Citation:

Cite this paper

Online since:

May 2026

Authors:

Zi Han Zhang*, Lei Yuan, Kai Yu Chen, Xiao Wen Wang, Xue Song Liu, Tong Xiao Hou, Bo Peng, Gui Bao Wang, Mi Ao Yu, Ren Xu Jia, Yu Ming Zhang

Keywords:

Charge-Imbalance, Edge Termination, Junction Termination Extension (JTE), Process Robustness, Silicon Carbide (SiC), Superjunction (SJ)

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* - Corresponding Author

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