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Benchmark Study of State-of-the-Art Commercial 1200V SiC MOSFETs for Automotive Applications

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Abstract:

A comparative study of state-of-the-art commercial 1200V trench-gate, planar-gate, and trench-assisted planar Silicon Carbide (SiC) MOSFETs is presented. The experimental study mainly focuses on disclosing the static and robustness characteristics of distinct SiC technologies targeting automotive applications under room and high temperatures. The benchmark study of static characteristics covers specific on-resistance (RON,SP), gate leakage (IGSS​), drain leakage (IDSS​), breakdown voltage (BVDSS​), and drain-induced barrier lowering (DIBL) effects. The avalanche robustness is investigated by the unclamping inductive switching (UIS) setup under 25 °C and 175 °C while the single-pulse and repetitive short-circuit capability is evaluated under hard switching fault (HSF) under 25 °C.

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Periodical:

Key Engineering Materials (Volume 1055)

Pages:

85-92

DOI:

https://doi.org/10.4028/p-uvfY1Y

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Cite this paper

Online since:

May 2026

Authors:

Kailun Zhong*, Vamsi Mulpuri, Vishank Talesara, Arash Salemi, Sumit Jadav, Siddarth Sundaresan

Keywords:

Automotive, Avalanche, On-Resistance, Robustness, Short-Circuit, SiC MOSFET, Static Characteristics

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