Paper Titles
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Design of the Robust Edge Termination Applied to 4.5 kV SiC SBD Embedded MOSFET against Humidity
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JTE-Based Termination Design and Technology Considerations for 1500 V 4H-SiC Superjunction MOSFETs
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2x Current Boosting Scheme in 3300 v 4H-SiC VDMOSFET
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Study of Single-Event-Burnout for Refilled-PMOS SiC Trench MOSFET
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Benchmark Study of State-of-the-Art Commercial 1200V SiC MOSFETs for Automotive Applications
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Study of SiC Thyristors with Integrated Temperature Sensors
p.93

Study of SiC Thyristors with Integrated Temperature Sensors

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Abstract:

SiC GTOs, with high current handling capability, are promising for high-voltage and high-power applications, but they also have temperature-related reliability issues, so real-time junction temperature monitoring is needed. In this paper, a novel 4H-SiC gate turn-off thyristor (GTO) structure with integrated temperature sensor is proposed. The proposed sensor is compatible with the SiC GTO process and allows for real-time temperature monitoring. TCAD simulation results show that the integrated sensor has a high sensitivity of 1.64mV/K and linearity of 0.99891, the temperature sensor monitors the internal temperature of the GTO device in real time with an error of no more than 2 K during complete GTO switching. This new structure is conducive to enhancing the reliability of SiC thyristor applications and system miniaturization.

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Periodical:

Key Engineering Materials (Volume 1055)

Pages:

93-98

DOI:

https://doi.org/10.4028/p-VQop5J

Citation:

Cite this paper

Online since:

May 2026

Authors:

Shu Hao Cheng, Kai Yu Chen, Zi Han Zhang*, Xiao Wen Wang, Lei Yuan, Da Huo, Xue Song Liu, Tong Xiao Hou, Ren Xu Jia, Yu Ming Zhang

Keywords:

4H-SiC GTO, PiN Diode, Real-Time Temperature Monitoring, Temperature Sensor

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Creative Commons CC BY 4.0

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* - Corresponding Author

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