Paper Titles
Preface
Study of Interface Traps and Scattering Mechanisms in the 4H-SiC MOS Channel Using Gated Hall Measurements
p.1
Gate Leakage Imaging of Silicon Carbide Power MOSFETs under Negative-Bias Gate Stress
p.7
Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors
p.13
1.2 kV SiC MOSFET with Reduced Dynamic Losses Enabled by SiN Gate Dielectric
p.19
Investigation of SiC MOSFETs Gate Capacitance Peak with Biased Drain and Its Relation with Transconductance
p.29
Insight into Bias-Temperature Instability of SiC MOSFETs Using Charge Pumping and Triple-Sense Threshold Measurements
p.35
Experimental Analysis of 4H-SiC CMOS NOT Logic Gate Down to 100K
p.43
Characterization of 4H-SiC Lateral MOSFETs up to 773 K
p.49

Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors

Article Preview
View Pdf By email

Abstract:

The far-UVC band (200–240 nm) is highly attractive for germicidal and solar-blind detection. To address limited surface carrier collection in epitaxial SiC phototransistors, we designed fully ion-implanted lateral phototransistors by combining transistor physics with CMOS-compatible processing. The lateral base width was systematically varied from 1 to 8 μm to investigate its influence on carrier transport and gain. A narrower base significantly enhanced photocurrent amplification, with the 1 μm device reaching 100.7 A/W at 200 nm and 60.0 A/W at 240 nm, while maintaining amplification up to the ~380 nm cutoff. Moreover, dark currents remained as low as 10⁻¹¹ A, confirming the advantage of structural engineering for high-performance far-UVC SiC phototransistors.

You have full access to the following eBook
Performance Analysis of SiC Power Devices Read eBook

Info:

Periodical:

Key Engineering Materials (Volume 1057)

Pages:

13-17

DOI:

https://doi.org/10.4028/p-0rgVLc

Citation:

Cite this paper

Online since:

May 2026

Authors:

Yang Liu*, Lei Yuan, Xue Song Liu, Tong Xiao Hou, Bo Peng, Ren Xu Jia, Yu Ming Zhang

Keywords:

Bipolar Phototransistor, Far-UVC Detection, Ultraviolet

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Share:

Citation:

* - Corresponding Author

References

[1] Li, Jiaqi, Zhou, Yue, Yi, Xiangyu, et al., Current Optics and Photonics 1, 196–202 (2017).

Google Scholar

[2] G. Wang, K. Wang, C. Gong, et al., IEEE Photonics J. 10, 1–13 (2018).

Google Scholar

[3] D. Guo, Y. Su, H. Shi, et al., ACS Nano 12, 12827–12835 (2018).

Google Scholar

[4] Y. Wang, W. Li, W. Xu, et al., IEEE Electron Device Lett. 45, 617–620 (2024).

Google Scholar

[5] Y. Wang, W. Li, D. Zhou, et al., IEEE Trans. Electron Devices 1–8 (2022).

Google Scholar

[6] C. Sun, H. Guo, L. Yuan, et al., IEEE Trans. Electron Devices 70, 2342–2346 (2023).

Google Scholar

[7] C. D. Matthus, T. Erlbacher, A. J. Bauer, et al., "Comparative Study of 4H-SiC UV-Sensors with Ion Implanted and Epitaxially Grown p-Emitter," in 2018 22nd International Conference on Ion Implantation Technology (IIT) (IEEE, 2018), p.110–113.

DOI: 10.1109/iit.2018.8807950

Google Scholar

[8] R. Cariou, J. Benick, F. Feldmann, et al., Nat Energy 3, 326–333 (2018).

Google Scholar

[9] T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices, and Applications, 1st ed. (Wiley, 2014).

DOI: 10.1002/9781118313534

Google Scholar

[10] S. Asada, T. Kimoto, and J. Suda, IEEE Trans. Electron Devices 64, 3016–3018 (2017).

Google Scholar

[11] S. Asada, J. Suda, and T. Kimoto, IEEE Trans. Electron Devices 65, 4786–4791 (2018).

Google Scholar

[12] G. P. Li, E. Hackbarth, and T.-C. Chen, IEEE Trans. Electron Devices 35, 89–95 (1988).

Google Scholar