Paper Titles
Preface
Study of Interface Traps and Scattering Mechanisms in the 4H-SiC MOS Channel Using Gated Hall Measurements
p.1
Gate Leakage Imaging of Silicon Carbide Power MOSFETs under Negative-Bias Gate Stress
p.7
Impact of Device Structure on the Performance of Ion-Implanted SiC Phototransistors
p.13
1.2 kV SiC MOSFET with Reduced Dynamic Losses Enabled by SiN Gate Dielectric
p.19
Investigation of SiC MOSFETs Gate Capacitance Peak with Biased Drain and Its Relation with Transconductance
p.29
Insight into Bias-Temperature Instability of SiC MOSFETs Using Charge Pumping and Triple-Sense Threshold Measurements
p.35
Experimental Analysis of 4H-SiC CMOS NOT Logic Gate Down to 100K
p.43
Characterization of 4H-SiC Lateral MOSFETs up to 773 K
p.49

Study of Interface Traps and Scattering Mechanisms in the 4H-SiC MOS Channel Using Gated Hall Measurements

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Abstract:

Gated Hall measurements of lateral MOSFET devices can be used to directly measure the inversion layer free carrier density and carrier Hall mobility. From this measurement the total number of charged interface traps (NIT) can be extracted. This provides useful insight into the degree of Coulomb scattering expected. By obtaining gated Hall data from 4° off-axis Si-face (0001) 4H-SiC MOSFETs with varied p-well doping levels, mobility limiting components can also be estimated. For these samples it is observed that interface trapped charge is almost half of the total inversion charge, and thus Coulomb scattering dominates at low Vgs or low transverse (or normal) effective field; while phonon scattering may dominate at moderate effective field, and surface roughness only limits mobility at gate fields higher than the rated usage, or at doping levels much higher than 2×1018 cm-3.

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Periodical:

Key Engineering Materials (Volume 1057)

Pages:

1-5

DOI:

https://doi.org/10.4028/p-AOAv5u

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Online since:

May 2026

Authors:

Suman Das, Daniel J. Lichtenwalner*, Shane R. Stein, Sei Hyung Ryu

Keywords:

Coulomb Scattering, Gated Hall, Hall Mobility, Interface Traps, Mobility Modeling, Surface Phonon, Surface Roughness

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