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A 3D Numerical Study of the Polishing Behavior during an Oxide Chemical Mechanical Planarization Process
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 257-258A 3D Numerical Study of the Polishing Behavior...

A 3D Numerical Study of the Polishing Behavior during an Oxide Chemical Mechanical Planarization Process

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Advances in Abrasive Technology VI

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Periodical:

Key Engineering Materials (Volumes 257-258)

Pages:

433-440

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.257-258.433

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Online since:

February 2004

Authors:

D.H. Lee, D.J. Kwon, Yi Koan Hong, Jin Goo Park

Keywords:

Chemical-Mechanical Planarization (CMP), CMP, Computational Fluid Dynamics (CFD), Finite Volume Method (FVM), FVM, Incompressible Navier-Stokes Equation, Pad

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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[1] W.J. Patrick, W.L. Guthrie, and P.M. Schiable: J. Electrochem. Soc., Vol. 138 (1991), p.1778.

[2] J.M. Steigerwald, S.P. Murarka and R.J. Gutmann: Chemical Mechanical Planarization of Microelectric Materials (Wiley-Interscience, New York 1997).

[3] H.K. Versteeg: An Introduction to Computational Fluid Dynamics (Longman, 1995).

[4] W. Jeng, J.J. Yeuan and S.H. Lin: Proc. of the Seventh International Chemical Mechnical Polish (CMP) for ULSI Multilevel Interconnection, 2001, p.59.

[5] B.E. Launder: Heat and Mass Transfer, 1974, p.131.

[6] D.S. Boning and O. Ouma: Semiconductors and Semimetals, Vol. 63 (2000), p.92. Removal rate ( Å/min) Removal rate ( Å/min) Removal rate ( Å/min)