A 3D Numerical Study of the Polishing Behavior during an Oxide Chemical Mechanical Planarization Process

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Periodical:

Key Engineering Materials (Volumes 257-258)

Edited by:

Thomas Pearce, Yongsheng Gao, Jun'ichi Tamaki and Tsunemoto Kuriyagawa

Pages:

433-440

Citation:

D.H. Lee et al., "A 3D Numerical Study of the Polishing Behavior during an Oxide Chemical Mechanical Planarization Process", Key Engineering Materials, Vols. 257-258, pp. 433-440, 2004

Online since:

February 2004

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[2] J.M. Steigerwald, S.P. Murarka and R.J. Gutmann: Chemical Mechanical Planarization of Microelectric Materials (Wiley-Interscience, New York 1997).

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[6] D.S. Boning and O. Ouma: Semiconductors and Semimetals, Vol. 63 (2000), p.92. Removal rate ( Å/min) Removal rate ( Å/min) Removal rate ( Å/min).