The Role of Hydrogen in the Growth of III-V Compound Semiconductors by OMVPE
p.27
p.27
Role of Hydrogen in Semiconductor, Dielectric and Metal Deposition onto InP by Means of Rapid Thermal Low Pressure Metalorganic Chemical Vapor Deposition
p.61
p.61
Hydrogenation of III-V Semiconductors during Processing
p.113
p.113
Sources of Hydrogen in III-V Device Processing
p.141
p.141
Plasma Passivation of III-V Semiconductor Surfaces
p.159
p.159
Hydrogen Implantation in III-V Compound Semiconductors and its Redistribution with Annealing
p.189
p.189
Hydrogen Diffusion in Compound Semiconductors
p.219
p.219
Vibrational Spectroscopy of Dopant-Hydrogen Complexes in III-V Semiconductors
p.251
p.251
Hydrogen in Crystalline Gallium Phosphide
p.281
p.281
Plasma Passivation of III-V Semiconductor Surfaces
Abstract:
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Periodical:
Materials Science Forum (Volumes 148-149)
Pages:
159-188
Citation:
Online since:
December 1993
Authors:
Keywords:
Clustered-Dry Processing, Fermi Level Pinning, GaAs, GaSb, H2 Plasma, Herojunction Bipolar Transistor (HBT), Infrared Spectroscopy, InP, Interface States (or Traps), Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), MISFET, N2 Plasma, Native Oxide, NH3 Plasma, Photoluminescence (PL), Reflection, Stability, Surface Characterization, Surface Passivation, Surface States
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© 1994 Trans Tech Publications Ltd. All Rights Reserved
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