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Materials Science Forum Vols. 258-263

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263

ToC:

Table of Contents

Paper Title Page

The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon
Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, V.I. Shakhovtsov, V.V. Shumov
1773
EPR Evidence of Hydrogen-Enhanced Diffusion of Aluminum in Silicon
Authors: Yu.V. Gorelkinskii, B.N. Mukashev, H.P. Zeindl
1777
Segregation of Gold at Dislocations Confirmed by Gold Diffusion into Highly Dislocated Silicon
Authors: Hartmut Bracht, A. Rodriguez Schachtrup, Ichiro Yonenaga
1783
Annealing of Low-Temperature Substitutional Gold in Silicon: Ring-Diffusion of Substitutional Gold in Silicon
Authors: Masami Morooka
1789
Rate Limiting Mechanism of Transition Metal Gettering in Multicrystalline Silicon
Authors: Scott A. McHugo, A.C. Thompson, Masayuki Imaizumi, H. Hieslmair, Eicke R. Weber
1795
Intrinsic Point Defect Engineering in Silicon High-Voltage Power Device Technology
Authors: N.A. Sobolev
1801
Influence of the Dislocation Loops on the Anomalous Diffusion of Fe Implanted into InP
Authors: Cesare Frigeri, A. Carnera, B. Fraboni, A. Gasparotto, F. Priolo, A. Camporese, G. Rossetto
1807
Lithium Induced Vacancy Formation and its Effect on the Diffusivity of Lithium in Gallium Arsenide
Authors: H.P. Gislason, K. Leosson, H. Svavarsson, Kimmo Saarinen, A. Mari
1813
Ab-Initio Investigations on Diffusion of Halogen Atoms in GaAs
Authors: Takahisa Ohno, Taizo Sasaki, Akihito Taguchi
1821
Low Temperature Intrinsic Diffusion Coefficient of Lithium in GaAs
Authors: K. Leosson, H.P. Gislason
1827

Showing 291 to 300 of 302 Paper Titles

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