Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Edited by:

Robert P. Devaty, David J. Larkin and Stephen E. Saddow

Pages:

971-974

DOI:

10.4028/www.scientific.net/MSF.527-529.971

Citation:

H. Yano et al., "Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide", Materials Science Forum, Vols. 527-529, pp. 971-974, 2006

Online since:

October 2006

Export:

Price:

$35.00

[1] K.C. Chang, N.T. Nuhfer, L.M. Porter and Q. Wahab: Appl. Phys. Lett. Vol. 77 (2000), p.2186.

[2] H. Yano, T. Hatayama, Y. Uraoka and T. Fuyuki: Mater. Sci. Forum Vols. 483-485 (2005), p.685.

[3] Y. Negoro, K. Katsumoto, T. Kimoto and H. Matsunami: Mater. Sci. Forum Vols. 457-460 (2004), p.933.

[4] S.M. Sze: Physics of Semiconductor Devices, 2nd Edition (Wiley, New York 1981), p.446.

In order to see related information, you need to Login.