Paper Title:
Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide
  Abstract

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Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
971-974
DOI
10.4028/www.scientific.net/MSF.527-529.971
Citation
H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, "Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide", Materials Science Forum, Vols. 527-529, pp. 971-974, 2006
Online since
October 2006
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