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Paper Titles
Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC
p.923
Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes
p.927
High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown
p.931
Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances
p.935
Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface
p.949
Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics
p.955
High Channel Mobility 4H-SiC MOSFETs
p.961
Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300°C NO Anneal
p.967
Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide
p.971

Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface

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Abstract:

Post-oxidation anneals that introduce nitrogen at the SiO2/4H-SiC interface have been most effective in reducing the large interface trap density near the 4H-SiC conduction band-edge for (0001) Si face 4H-SiC. Herein, we report the effect of nitridation on interfaces created on the (11 20) a-face and the (0001) C-face of 4H-SiC. Significant reductions in trap density (from >1013 cm-2 eV-1 to ~ 1012 cm-2 eV-1 at EC-E ~0.1 eV) were observed for these different interfaces, indicating the presence of substantial nitrogen susceptible defects for all crystal faces. Annealing nitridated interfaces in hydrogen results in a further reduction of trap density (from ~1012 cm-2 eV-1 to ~5 x 1011 cm-2 eV-1 at EC-E ~0.1 eV). Using sequential anneals in NO and H2, maximum field effect mobilities of ~55 cm-2 V-1s-1 and ~100 cm-2 V-1s-1 have been obtained for lateral MOSFETs fabricated on the (0001) and (11 20) faces, respectively. These electronic measurements have been correlated to the interface chemical composition.

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

949-954

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.949

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Online since:

October 2006

Authors:

S. Dhar, S.R. Wang, Ayayi Claude Ahyi, Tamara Isaacs-Smith, Sokrates T. Pantelides, John R. Williams, Leonard C. Feldman

Keywords:

Crystal Faces, Field Effect Mobility, Interface States (or Traps), Nitric Oxide (NO), Nitridation, Oxidation, Passivation, Post Oxidation Annealing, Post-Metallization Annealing, SiO2/SiC Interface

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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