Nanoscience and Technology

Volumes 121-123

doi: 10.4028/

Paper Title Page

Authors: S.B. Long, Zhi Gang Li, X.W. Zhao, Bao Qin Chen, Ming Liu

Abstract: For compatibility with present CMOS devices, the single-electron transistor (SET) is preferably made in silicon. In this paper, a Si-based...

Authors: C.H. Sow, M.C. Kim, K.Y. Lim
Authors: Ao Guo, Yun Yi Fu, Lun Hui Guan, Zu Jin Shi, Zhen Nan Gu, Ru Huang, Xing Zhang

Abstract: The electrical transport properties of C70 and C60 fullerene peapods are investigated. We report the fabrications and performances of...

Authors: Min Cheol Shin

Abstract: The device characteristics of the nanoscale metal/insulator tunnel transistor are investigated by solving the ballistic quantum transport...

Authors: S.D. Hutagalung, K.A. Yaacob, Y.C. Keat

Abstract: Ballistic electron emission microscopy (BEEM) is a new method by apply the spatial resolution capabilities of the scanning tunneling...

Authors: Ping Juan Niu, Hai Rong Hu, Hong Wei Liu, Wen Xin Wang, Xun Zhong Shang

Abstract: We designed the monolithic opto-electronic integrated circuit composed by Resonant Tunnelling Diodes (RTD) and Heterojunction...

Authors: K. Tsukagoshi, S. Uryu, Yoshiteru Aoyagi
Authors: She Song Huang, Zhi Chuan Niu, Jian Bai Xia

Abstract: Fabrication of semiconductor nanostructures such as quantum dots (QDs), quantum rings (QRs) has been considered as the important step for...

Authors: J. Mizubayashi, J. Haruyama, I. Takesue, T. Okazaki, Hisanori Shinohara, Y. Harada, Y. Awano

Abstract: Anomalously high values of power α (1.6 < α < 12) are found in power laws in conductance versus energy relationships in carbon-nanotube...

Authors: P.N. Racec, Ulrich Wulf

Abstract: Starting from a mean field calculation for the static capacitance of a MIS-nanostructure with a near back gate [P.N. Racec, E. R. Racec and...


Showing 121 to 130 of 348 Paper Titles