Solid State Phenomena
Vols. 131-133
Vols. 131-133
Solid State Phenomena
Vol. 130
Vol. 130
Solid State Phenomena
Vol. 129
Vol. 129
Solid State Phenomena
Vol. 128
Vol. 128
Solid State Phenomena
Vol. 127
Vol. 127
Solid State Phenomena
Vols. 124-126
Vols. 124-126
Solid State Phenomena
Vols. 121-123
Vols. 121-123
Solid State Phenomena
Vol. 120
Vol. 120
Solid State Phenomena
Vol. 119
Vol. 119
Solid State Phenomena
Vol. 118
Vol. 118
Solid State Phenomena
Vols. 116-117
Vols. 116-117
Solid State Phenomena
Vol. 115
Vol. 115
Solid State Phenomena
Vol. 114
Vol. 114
Solid State Phenomena Vols. 121-123
Paper Title Page
Abstract: In this paper, it is presented that flicker (1/f) noise of ultra thin gate oxide can be improved
by initial oxidation and subsequent plasma nitridation(PN). PN which raises Nitrogen peak upward
from the Si/Oxide interface to gate polysilicon/Oxide interface is adopted mainly to improve the life
time such as Negative-Bias Temperature Instability (NBTI) and hot carrier in Nano CMOS
technology. Three different types of initial oxidation prior to plasma nitridation are investigated. One
is slow thermally grown oxide(STO) in very small Oxygen ambient, another is rapid thermally grown
oxide(RTO) and the other is grown in Nitrous oxygen ambient (NO). Oxide thickness of all splits is
about 14.5< Then, it is shown that STO has the lowest drain current noise power (Sid) among the
splits. The interface trap densitie (Dit) of each oxide is characterized using charge pumping method.
Finally, we reached a conclusion that the 1/f noise can be significantly reduced by initial STO and
Plasma Nitridation in Nano CMOS technology.
595
Abstract: A numerical method based on Finite Difference Time Domain (FDTD)
scheme for computing the photonic band-structure of three dimensional photonic
crystals is introduced in this paper. Also, the accuracy and stability, numerical
dispersion, boundary Conditions as well as excitation attaching to the scheme are
detailed analyzed. For checking the method, the simulating results of photonic band
structure on two type lattices are presented.
599
Abstract: In order to realize active grinding control, a nanometer micropositioning table is
designed. The table has a circular working area with diameter of 150 mm. Three piezoelectric
actuators are utilized in parallel to drive the moving part with flexure guide mechanism. Through
cooperation of the three piezoelectric actuators, the moving part can implement 3-DOF nanometer
positioning. The flexure hinge mechanism can also provide preload for the actuators. The preload
can keep the moving part from separation with the piezoelectric actuators during moving process.
The dynamic model of the micropositioning table is developed with consideration of the driving
circuit. To improve the dynamic performance of the micropositioning table, a decoupling PID
controller is designed by use of frequency domain approach. The experimental tests have been
carried out to verify the performance of the micropositioning table and the established decoupling
controller.
603
Abstract: The Monte Carlo(MC) and Embedded-Atoms Method(EAM) potential are employed to investigate the
structures and binding energies of copper clusters. Three results are obtained: first, the copper clusters are
formed by gradually increasing atoms to icosahedral surface when the temperature is 300K and the number
of atoms is from 2 to 70; second, the higher the symmetries are, the more stable the structures of copper
clusters are; third, copper clusters tend to be stereo construction but not planer construction when the
number of atoms is less. The structure of Cu147 is three-fly-icosahedron when the system of 147 atoms
reached equilibrium at 300K. And at 700K, all 500 atoms form clusters in gas phase.
607
Abstract: This paper proposes a novel method to on-chip fabricate a none-dead-volume microtip for
ESI-MS applications. The microfluidic chip and ESI tip are fabricated in low-cost plastic based
materials using a simple and rapid fabrication process. A constant-speed-pulling method is developed
to fabricate the ESI tip by pulling mixed PMMA glue using a 30-μm stainless wire through the
pre-formed microfluidic channel. The equilibrium of surface tension of PMMA glue will result in a
sharp tip after curing. A highly uniform micro-tip can be formed directly at the outlet of the
microfluidic channel with minimum dead-volume zone. Detection of caffeine, myoglobin, lysozyme
and cytochrome C biosamples confirms the microchip device can be used for high resolution ESI-MS
applications.
611
Abstract: Meso- piezoresistive effect is proposed, which is defined as “Strain Tuning of the
resonant current”, in order to convert a weak mechanical signal into a strong tunneling current
signal. If a mechanical signal is acted on an related mechanical nano-structure, the corresponding
strain distribution will be produced in the structure; the built- in electric field will be resulted from
the strain in system in some conditions; the strain and built-in electric filed will result in the change
of electronic energy states; the change of electronic energy state will influence on the value of the
tunneling current. Two experimental units are designed, one being used to detect an acoustic signal
under sea, other to detect acceleration.
619
Abstract: In this paper, novel Ni Germanosilicide technology using the 1%-nitrogen doped Ni and
pure Ni stack structure has been proposed for nano-scale CMOS technology. The Ni Germanosilicide
is formed on the Si0.8Ge0.2 layer which is known as an optimal composition for strained silicon
application. Proposed structure showed much better thermal stability than pure Ni case. Silicide
characteristics such as the sheet resistance, the interface uniformity of silicide/SiGe, surface
roughness, and depth profile of the Ni, Si, and Ge showed little degradation even with the high
temperature post-silicidation annealing at 600 for 30 min. Therefore, the proposed method is
highly promising for nano-scale CMOS technology.
623
Abstract: Liquid phase deposition (LPD) grown InGaP native oxide near room temperature (~60oC) is
demonstrated and investigated for the first time. A high oxidation rate (~80nm/hr) is obtained and
checked by SEM and AES. The oxide is determined to be composed of InPO4 and Ga2O3 which are
analyzed by the results of XPS measurement. Due to the presence of excellent quality of InGaP
native oxide, high hydrogen (H2) sensitivity in output current of Pd/oxide/InGaP MOS Schottky
diode is observed. Under the applied voltage of -1V and 50ppm H2/air, a high sensitivity of 1090 is
obtained. In addition, an obvious variation of output current and a short response time due to the
exposure to different H2 concentration are also achieved.
627
Abstract: Single-wall Carbon nanotubes (SWNTs) bonded with dodecylamine groups were
obtained by chemical modification. The modified SWNTs showed improved solubility in organic
solvents. Both its chemical and aggregated structure was characterized by means of FTIR and TEM.
The photoconductivity of oxotitanium phthalocyanine (TiOPc) doped with the modified SWNTs
was investigated by xerographic photoinduced discharge method. The results showed that the
photosensitivity of the double-layered photoreceptor composed of the SWNTs/TiOPc composite as
charge generation material was higher than that of pristine TiOPc, and the sensitivity increased with
the content of modified SWNTs in the composites. It is the photoinduced charge transfer between
TiOPc and SWNTs that contributes to the improved photosensitivity of the modified SWNTs/TiOPc
composites.
631