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All Wet Stripping of Implanted Photoresist
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Study of a Metal Gate and Silicon Selective “Dry Ash Only” Process for Combined Extension and Halo Implanted Photo Resist
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High Dose Implant Stripping and Residue Removal with Sequential Plasma and Vacuum Aerosol Processes
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Confined Chemical Cleaning: A Novel Concept Evaluated for Front End of Line Applications
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Impact of RF Oxygen Plasma on Thermal Oxide Etch-Rate
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I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion
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II: Ultra-Shallow Junction Cleaning: Methodologies for Process and Chemistry Optimization
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Effect of Dopants on the Dissolution Behavior of Silicon Substrates in HF-Based Cleaning Solutions
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HomeSolid State PhenomenaSolid State Phenomena Vol. 134Confined Chemical Cleaning: A Novel Concept...

Confined Chemical Cleaning: A Novel Concept Evaluated for Front End of Line Applications

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Ultra Clean Processing of Semiconductor Surfaces VIII

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Periodical:

Solid State Phenomena (Volume 134)

Pages:

121-124

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.121

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Online since:

November 2007

Authors:

Ingrid Vos, Stefan Peeters, Rita Verbeeck, Werner Boullart, Johann Vertommen

Keywords:

Cleaning, Contact Cleaning, Gate Etch, Shallow Trench Isolation

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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