I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion

Mike Ameen; Aseem K.  Srivastava; Ivan L. Berry

doi:10.4028/www.scientific.net/SSP.134.129

Paper Titles

Study of a Metal Gate and Silicon Selective “Dry Ash Only” Process for Combined Extension and Halo Implanted Photo Resist
p.113

High Dose Implant Stripping and Residue Removal with Sequential Plasma and Vacuum Aerosol Processes
p.117

Confined Chemical Cleaning: A Novel Concept Evaluated for Front End of Line Applications
p.121

Impact of RF Oxygen Plasma on Thermal Oxide Etch-Rate
p.125

I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion
p.129

II: Ultra-Shallow Junction Cleaning: Methodologies for Process and Chemistry Optimization
p.133

Effect of Dopants on the Dissolution Behavior of Silicon Substrates in HF-Based Cleaning Solutions
p.139

The Effect of Various Process Induced Damages on Wet Etching Rate Difference
p.143

How Bubbles (Can) Clean
p.151

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I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion

Abstract:

We have investigated the use of Rs and SIMS measurements to quantify substrate erosion due to plasma ashing and subsequent wet cleaning in the creation of ultra-shallow junctions. The near-surface proximity of the implants makes them highly sensitive to various plasma and wet chemical processes. We also observed a dependency on the implant species, dose and energy that can be correlated to substrate damage incurred during implant.