I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion
We have investigated the use of Rs and SIMS measurements to quantify substrate erosion due to plasma ashing and subsequent wet cleaning in the creation of ultra-shallow junctions. The near-surface proximity of the implants makes them highly sensitive to various plasma and wet chemical processes. We also observed a dependency on the implant species, dose and energy that can be correlated to substrate damage incurred during implant.
Paul Mertens, Marc Meuris and Marc Heyns
M. S. Ameen et al., "I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion", Solid State Phenomena, Vol. 134, pp. 129-131, 2008