I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion

Abstract:

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We have investigated the use of Rs and SIMS measurements to quantify substrate erosion due to plasma ashing and subsequent wet cleaning in the creation of ultra-shallow junctions. The near-surface proximity of the implants makes them highly sensitive to various plasma and wet chemical processes. We also observed a dependency on the implant species, dose and energy that can be correlated to substrate damage incurred during implant.

Info:

Periodical:

Solid State Phenomena (Volume 134)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

129-131

DOI:

10.4028/www.scientific.net/SSP.134.129

Citation:

M. S. Ameen et al., "I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion", Solid State Phenomena, Vol. 134, pp. 129-131, 2008

Online since:

November 2007

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Price:

$35.00

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