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Confined Chemical Cleaning: A Novel Concept Evaluated for Front End of Line Applications
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Impact of RF Oxygen Plasma on Thermal Oxide Etch-Rate
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I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion
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II: Ultra-Shallow Junction Cleaning: Methodologies for Process and Chemistry Optimization
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Effect of Dopants on the Dissolution Behavior of Silicon Substrates in HF-Based Cleaning Solutions
p.139

The Effect of Various Process Induced Damages on Wet Etching Rate Difference
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How Bubbles (Can) Clean
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Adhesion and Removal of Silica and Ceria Particles on the Wafer Surfaces in STI and Poly Si CMP
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HomeSolid State PhenomenaSolid State Phenomena Vol. 134Effect of Dopants on the Dissolution Behavior of...

Effect of Dopants on the Dissolution Behavior of Silicon Substrates in HF-Based Cleaning Solutions

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Ultra Clean Processing of Semiconductor Surfaces VIII

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Periodical:

Solid State Phenomena (Volume 134)

Pages:

139-142

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.139

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Online since:

November 2007

Authors:

Salima Abu Jeriban, Ivette Guiot, Luc Bacherius, Joris Proost, Erik Sleeckx, Rita Vos, Paul W. Mertens

Keywords:

Doped Silicon, Etching, HF, Post-Ion Implantation Cleaning

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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[1] S. Tian et al, IEEE Trans. Electron Devices, 45, 1226-1238, June (1998).

[2] International Technology Roadmap for Semiconductor, Front End Processing, Ed. (2005).

[3] F. Holsteyns et al, Semiconductor Manufacturing, IEEE International Symposium 378-381, (2003).