Impact of RF Oxygen Plasma on Thermal Oxide Etch-Rate

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Periodical:

Solid State Phenomena (Volume 134)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

125-128

Citation:

E. Bellandi et al., "Impact of RF Oxygen Plasma on Thermal Oxide Etch-Rate", Solid State Phenomena, Vol. 134, pp. 125-128, 2008

Online since:

November 2007

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[1] E. Bellandi, A. Elbaz and M. Alessandri Etch rate depth profiling by single wafer etching equipment, UCPSS 2004, Bruxelles, Belgium.

DOI: https://doi.org/10.4028/3-908451-06-x.107

[2] J.F. Ziegler, J.P. Biersack (www. SRIM. org).

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