Paper Titles

All Wet Stripping of Implanted Photoresist
p.109

Study of a Metal Gate and Silicon Selective “Dry Ash Only” Process for Combined Extension and Halo Implanted Photo Resist
p.113

High Dose Implant Stripping and Residue Removal with Sequential Plasma and Vacuum Aerosol Processes
p.117

Confined Chemical Cleaning: A Novel Concept Evaluated for Front End of Line Applications
p.121

Impact of RF Oxygen Plasma on Thermal Oxide Etch-Rate
p.125

I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion
p.129

II: Ultra-Shallow Junction Cleaning: Methodologies for Process and Chemistry Optimization
p.133

Effect of Dopants on the Dissolution Behavior of Silicon Substrates in HF-Based Cleaning Solutions
p.139

The Effect of Various Process Induced Damages on Wet Etching Rate Difference
p.143

HomeSolid State PhenomenaSolid State Phenomena Vol. 134Impact of RF Oxygen Plasma on Thermal Oxide...

Impact of RF Oxygen Plasma on Thermal Oxide Etch-Rate

Article Preview

Abstract:

You might also be interested in these eBooks

Ultra Clean Processing of Semiconductor Surfaces VIII

Info:

Periodical:

Solid State Phenomena (Volume 134)

Pages:

125-128

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.125

Citation:

Cite this paper

Online since:

November 2007

Authors:

Enrico Bellandi, Annamaria Votta, Francesco Pipia, Matteo Ferrerio, Cinzia De Marco, Simone Alba, Mauro Alessandri

Keywords:

Etch Rate Profiles, Plasma Damage, Resist Removal

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2008 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] E. Bellandi, A. Elbaz and M. Alessandri Etch rate depth profiling by single wafer etching equipment, UCPSS 2004, Bruxelles, Belgium.

DOI: 10.4028/www.scientific.net/ssp.103-104.107

[2] J.F. Ziegler, J.P. Biersack (www. SRIM. org).