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Vols. 57-58

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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58

Solid State Phenomena Vols. 57-58

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58

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Paper Title Page

Ge Concentration Effect on the Dislocation Mobility in the Bulk SiGe Alloy Single Crystals

Authors: Yu.L. Iunin, Valeri I. Orlov, D.V. Dyachenko-Dekov, Nikolay V. Abrosimov, S.N. Rossolenko, W. Schröder

419

On the Defect Structures in Te-Doped GaAs

Authors: Cesare Frigeri, J.L. Weyher, J. Jiménez, P. Martín, S. Müller

425

Study of Surface Conduction Related Effects in GaAs MESFET's

Authors: V.R. Balakrishnan, Vijay Kumar, S. Ghosh

431

Nitridation Effects in n-CdTe

Authors: S. Gurumurthy, H.L. Bhat, Vijay Kumar

441

Formation of Grown-in Defects in CZ-Si Crystals

Authors: Mitsuhiro Hasebe, Katsuhiko Nakai, Wataru Ohashi, Y. Ikematsu, T. Mizutani, T. Iwasaki

449

X-Ray Diffractometry and Admittance Spectroscopy Investigation of Silicon Implanted at Low Energies with Oxygen, Argon, or Silicon

Authors: P. Zaumseil, S. Kar

459

Peculiarities of Raman Spectra and Real Structure of Ge_1-xSi_x Solid Solution

Authors: B. Dietrich, L.K. Orlov

465

Computer Simulation of Impurity Diffusion in the Vicinity of Grain Boundaries (Modified Fisher Model)

Authors: A.K. Fedotov, M. Chuiko, A. Rabyshko, S. Shumski

471

Improved Extraction of Si Substrate Parameters from Combined I-V and C-V Measurements on P-N Junction Diodes

Authors: A. Czerwinski, Eddy Simoen, Jan Vanhellemont, Daniel Tomaszewski, J. Gibki, A. Bakowski

477

An Experimental Study of Ion Beam and ECR Hydrogenation of Self-Ion Implantation Damage in Silicon by Admittance Spectroscopy and X-Ray Triple Crystal Diffractometry

Authors: S. Kar, P. Zaumseil, S. Ashok

483

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