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HomeSolid State PhenomenaSolid State Phenomena Vols. 63-64

Solid State Phenomena Vols. 63-64

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.63-64

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Table of Contents

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Paper Title Page

Monte Carlo Simulation of the Recombination Contrast of Dislocations

Authors: Nouar Tabet

89

EBIC Characterization of Oxygen Precipitation and Denuded Zone in Intrinsically Gettered P-Type Czochralski Silicon

Authors: S. Spiga, Antonio Castaldini, Anna Cavallini, Maria Luisa Polignano, F. Cazzaniga

97

Impact of Phosphorus Diffusion on the Contamination Level of Dislocations in Deformed Float Zone Silicon as Studied by Beam Injection Techniques

Authors: K. Knobloch, Martin Kittler, Winfried Seifert, J.J. Simon, Isabelle Périchaud

105

LBIC Investigations of the Lifetime Degradation by Extended Defects in Multicrystalline Solar Silicon

Authors: Markus Rinio, Hans Joachim Möller, Martina Werner

115

Determination of the Surface Recombination Velocity and of Its Evolution in Monocrystalline Silicon by the Light Beam Induced Current Technique in Planar Configuration

Authors: Simona Spadoni, Maurizio Acciarri, G. Barbi, Sergio Pizzini

123

SEM-EBIC Study of Defects in Epitaxial AlGaN Layers

Authors: G.N. Panin, O.V. Kononenko, V.N. Matveev, Eugene B. Yakimov, Oliver Ambacher

131

Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study

Authors: A. Cremades, M. Albrecht, Axel Voigt, J. Krinke, R. Dimitrov, Oliver Ambacher, M. Stutzmann

139

Ion Beam Induced Luminescence

Authors: K.G. Malmqvist

147

Nanocharacterization of Semiconductors by Scanning Photoluminescence Microscopy

Authors: P. Fischer, J. Christen, M. Zacharias, H. Nakashima, K. Hiramatsu

151

Cathodoluminescence Microscopy of Semiconductor Devices Using a Novel Detector with High Collection and Backscattered Electron Rejection Efficiency

Authors: Jacob C.H. Phang, Daniel S.H. Chan, W.K. Chim, Yan Yi Liu, X. Liu

159

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