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HomeSolid State PhenomenaSolid State Phenomena Vols. 82-841D-ACAR Studies of As-Grown Impurity Centers in...

1D-ACAR Studies of As-Grown Impurity Centers in Silicon

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Gettering and Defect Engineering in Semiconductor Technology IX

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Periodical:

Solid State Phenomena (Volumes 82-84)

Pages:

795-800

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.82-84.795

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Online since:

November 2001

Authors:

N.Yu. Arutyunov, V.Yu. Trashchakov

Keywords:

Angular Correlation Curves, Anisotropy, Annihilation Rate, As-Grown Defects, Carbon, Core Electrons, Oxygen, Positrons, Silicon

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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