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Comparison of 3C-SiC and 4H-SiC Power MOSFETs

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Abstract:

A comprehensive comparison of 3C-SiC and 4H-SiC power MOSFETs was performed, aimed at quantifying and comparing the devices’ on-resistance and switching loss. To this end, the relevant material parameters were collected using experimental data where available, or those obtained by simulation. This includes the bulk mobility as a function of doping density, the breakdown field as a function of doping and the MOSFET channel mobility. A device model was constructed and then used to calculate the on-resistance and breakdown voltage of a properly scaled device as a function of the doping density of the blocking layer. A SPICE model was constructed to explore the switching transients and switching losses. The simulations indicate that, for the chosen material parameters, a 600 V 3C-SiC MOSFET has an on-resistance, which is less than half that of a 4H-SiC MOSFET as are the switching losses in the device.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

774-777

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.774

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Online since:

June 2018

Authors:

Bart J. Van Zeghbroeck*, Hamid Fardi

Keywords:

3C-SiC, Losses, MOSFET, On-Resistance, Power, Switching

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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