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Beam Injection Assessment of Defects in Semiconductors

Solid State Phenomena Volumes 63 - 64

• Papers
• Abstracts

• p1 Charge Collection Scanning Microscopy: Non-Conventional Applications   [ 815 K ]
  Authors: Antonio Castaldini, Anna Cavallini
• p13 EBIC Study of Field Effect Transistors on Modulation-Doped AlGaAs/lnGaAs/GaAs Heterostructures   [ 561 K ]
  Authors: B. Sieber, J.-L. Farvacque
• p25 EBIC of Strained Si/SiGe 2DEGs Showing Lateral Electron Confinement   [ 448 K ]
  Authors: Carl E. Norman, N. Griffin, D.D. Arnone, D.J. Paul, M. Pepper, B. Gallas, J.M. Fernández
• p33 Laser Induced Mapping for Separation of Bulk and Surface Recombination   [ 651 K ]
  Authors: H.-C. Ostendorf, A.L. Endrös
• p45 Analysis of Minority Carrier Diffusion in the Presence of a Dislocation Array: Effective Diffusion Length, Luminescence Efficiency and Dark Current   [ 334 K ]
  Authors: C. Donolato
• p53 Detection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.   [ 717 K ]
  Authors: Santo Martinuzzi, Isabelle Périchaud, Scott A. McHugo
• p61 Combined MOS/EBIC and Tem Study of Electrically Active Defects in SOI Wafers   [ 383 K ]
  Authors: O.V. Kononchuk, I.E. Bondarenko, George A. Rozgonyi
• p69 Characterization of Laser Structures by EBIC Measurements and Simulation   [ 468 K ]
  Authors: I. Rechenberg, H. Wenzel, A. Knauer, G. Beister
• p77 Evaluation of p-n Junction Position and Channel Length in Si Devices with Resolution of a Few Nanometers by Low-Energy EBIC   [ 387 K ]
  Authors: Martin Kittler, J. Lärz
• p89 Monte Carlo Simulation of the Recombination Contrast of Dislocations   [ 261 K ]
  Authors: N. Tabet