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Defects in Semiconductors 18

Materials Science Forum Volumes 196 - 201

• Papers
• Abstracts

• p91 Ga Bound Excitons in 6H-SiC   [ 256 K ]
  Authors: Anne Henry, Christer Hallin, I.G. Ivanov, J. Peder Bergman, Olle Kordina, Bo Monemar, Erik Janzén
• p97 Photoluminescence and Electron-Spin-Resonance Studies of Defects in Ion-Implanted Thermal SiO₂ Films   [ 210 K ]
  Authors: Hironobu Nishikawa, Hisao Fukui, Eiji Watanabe, D. Ito, M. Takiyama, A. Ieki, Y. Ohki
• p103 Theory of Interstitial Oxygen in Silicon and Germanium   [ 272 K ]
  Authors: E. Artacho, F. Yndurain
• p109 Impurity Behavior during Si Single Crystal Growth from the Melt   [ 231 K ]
  Authors: T. Izumi, H. Morita, T. Fujiwara, H. Fujiwara, S. Inami
• p115 Lattice Sites of Li in Si and Ge   [ 307 K ]
  Authors: Ulrich Wahl, S.G. Jahn, M. Restle, H. Quintel, H. Hofsäss
• p121 Oscillator Strengths and Linewidths of Shallow Impurity Spectra in Si and Ge   [ 255 K ]
  Authors: Boris A. Andreev, E.B. Kozlov, T.M. Lifshits
• p127 Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As   [ 279 K ]
  Authors: K.M. Itoh, W. Walukiewicz, J.W. Beeman, Eugene E. Haller, Hyun Jung Kim, A.J. Mayur, M.D. Sciacca, A.K. Ramdas, Ryszard Buczko, J.W. Farmer, V.I. Ozhogin
• p133 Carbon Induced Inhomogeneous Strain Splitting of the Phosphorus Bound Exciton Line in Silicon   [ 251 K ]
  Authors: A.N. Safonov, Edward C. Lightowlers, Gordon Davies
• p139 Isoelectronic Bound-Multiexciton Systems in Thermally-Treated Czochralski Silicon   [ 268 K ]
  Authors: L. Jeyanathan, Edward C. Lightowlers, Gordon Davies
• p145 Excitons Bound to Isoelectronic C_3V-Defects B⁴₈₀ (1.1068 eV) in Silicon   [ 196 K ]
  Authors: A.S. Kaminskii, E.V. Lavrov
• p151 Defect Production and Annealing in Degenerate Silicon Irradiated with fast Electrons at Low Temperatures   [ 306 K ]
  Authors: Peter Ehrhart, Valentin V. Emtsev, D.S. Poloskin, Holger Zillgen
• p157 Optical Studies of Infrared Active Defects in Irradiated Si After Annealing at 450°C   [ 295 K ]
  Authors: Y. Shi, Masashi Suezawa, Feng Mei Wu, M. Imai, Y.D. Zheng, Koji Sumino
• p163 Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions   [ 178 K ]
  Authors: Valentin V. Emtsev, D.S. Poloskin, E.I. Shek, N.A. Sobolev
• p167 EPR and IR Absorption of Defects in Isotopically Enriched Germanium   [ 181 K ]
  Authors: L.I. Khirunenko, N.A. Tripachko, V.I. Shakhovtsov, V.I. Yashnik, V.V. Shumov
• p173 NMR Study of Impurity Electronic Structure and Dynamics   [ 215 K ]
  Authors: W.W. Warren, S.E. Fuller, A. Göbel, U. Bindley, J.K. Furdyna