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Gettering and Defect Engineering in Semiconductor Technology VII

Solid State Phenomena Volumes 57 - 58

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• p109 The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers   [ 381 K ]
  Authors: M.G. Mil'vidskii, Vladimir V. Voronkov, K.L. Enisherlova, V.Ja. Reznick
• p115 Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers   [ 502 K ]
  Authors: N. Gay, Santo Martinuzzi
• p123 Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si   [ 408 K ]
  Authors: Robert J. Falster, M. Cornara, D. Gambaro, M. Olmo, M. Pagani
• p129 Vacancy-Assisted Oxygen Precipitation Phenomena in Si   [ 380 K ]
  Authors: Robert J. Falster, M. Pagani, D. Gambaro, M. Cornara, M. Olmo, G. Ferrero, P. Pichler, M. Jacob
• p137 Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers   [ 473 K ]
  Authors: Koji Sueoka, M. Akatsuka, H. Katahama, N. Adachi
• p143 State of Oxygen and Growth Conditions   [ 342 K ]
  Authors: T.M. Tkacheva, G.N. Petrov
• p149 Analyzing Oxygen Precipitation Using the Surface Photovoltage Technique (SPV)   [ 399 K ]
  Authors: P. Moens, W. Dobbelaere, T. Colpaert
• p155 Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements   [ 336 K ]
  Authors: Eugenijus Gaubas, Jan Vanhellemont, Eddy Simoen, C. Claeys, Winfried Seifert
• p161 Oxygen Precipitate Nucleation Process in Silicon with Different Oxygen Concentration and Structural Perfection   [ 526 K ]
  Authors: I.V. Antonova, Andrzej Misiuk, V.P. Popov, A.E. Plotnikov, Barbara Surma
• p167 Initial Stage of Oxygen Precipitation in Silicon   [ 238 K ]
  Authors: A. Kornylo, A. Maksymov, M. Pashkovski, I. Savytskii
• p171 Oxygen Precipitation in Silicon Thin Layers in the Presence of Carbon   [ 570 K ]
  Authors: T.M. Tkacheva, G.N. Petrov, K.L. Enisherlova, T.F. Rusak
• p177 Heterogeneous Precipitation of Silicon Oxide in Silicon at Laser Induced Centres   [ 575 K ]
  Authors: Yu. Blums, Arthur Medvid
• p183 Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium   [ 196 K ]
  Authors: Lyudmila I. Khirunenko, Yu.V. Pomozov, V.I. Shakhovtsov, V.V. Shumov
• p189 Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation   [ 312 K ]
  Authors: Alexander G. Ulyashin, Yu.A. Bumay, Reinhart Job, G. Grabosch, D. Borchert, Wolfgang R. Fahrner, A.Yu. Diduk
• p197 Erbium in Silicon: Problems and Challenges   [ 495 K ]
  Authors: Simona Binetti, M. Donghi, Sergio Pizzini, Antonio Castaldini, Anna Cavallini, B. Fraboni, N.A. Sobolev