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Beam Injection Assessment of Microstructures in Semiconductors

Solid State Phenomena Volumes 78 - 79

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• p127 Luminescence Centers Characterization in A²B⁶ Semiconductors and Their Thin Diffusion Layers by Cathodoluminescence Defectoscopy   [ 454 K ]
  Authors: M.V. Nazarov
• p133 Multi-Band Cathodoluminescence Microscopy for Materials Science   [ 380 K ]
  Authors: Hiroshi Saijo, Toshiyuki Isshiki, Makoto Shiojiri
• p139 SEM CL In-Situ Observation during Dislocation Motion in GaAs and CdTe   [ 670 K ]
  Authors: L. Hoering, Jürgen Schreiber, U. Hilpert
• p149 Semiconductor Inspection System for Yield Enhancement   [ 523 K ]
  Authors: Y. Usami, I. Kawata
• p157 Formation and Current-Voltage Characteristics of SiC/Si-dot/SiC Resonant Tunneling Diodes   [ 295 K ]
  Authors: Yoshifumi Ikoma, T. Tada, K. Uchiyama, Fumio Watanabe, Teruaki Motooka
• p165 Excitonic Emission from High-Quality Homoepitaxial Diamond Film   [ 255 K ]
  Authors: Hideyuki Watanabe, Takashi Sekiguchi, Hideyo Okushi
• p171 Defect Characteristics in Sulfur-Implanted CVD Homoepitaxial Diamond   [ 328 K ]
  Authors: Mitsuru Hasegawa, M. Ogura, Daisuke Takeuchi, Sadanori Yamanaka, Hideyuki Watanabe, Shien Ri, Naoto Kobayashi, Hideyo Okushi, Takashi Sekiguchi
• p177 Scanning Probe Field Emission Current Measurements on Polycrystalline Diamond Films   [ 359 K ]
  Authors: H. Wakimoto, H. Tomokage, Young Do Kim, W. Choi, Y. Iseri, T. Ando
• p183 Surface Characterization of Plasma Etched DLC Films by Scanning Tunneling Microscopy and Atomic Force Microscopy   [ 311 K ]
  Authors: E.R. Hwang, W. Choi, Y. Iseri, H. Tomokage
• p191 Field Emission Characteristics of Plasma Enhanced Chemical Vapor Deposited Diamond-Like Carbon Films Using Scanning Probe Measurements   [ 267 K ]
  Authors: W. Choi, E.R. Hwang, N. Nomura, S. Itose, Y. Iseri, T. Ando, Young Do Kim, H. Tomokage
• p197 Defects Analysis of Diamond Films in Cross Section Using Cathodoluminescence and High-Resolution Transmission Electron Microscopy   [ 555 K ]
  Authors: Daisuke Takeuchi, Hideyuki Watanabe, Sadanori Yamanaka, Hidetaka Sawada, Hideki Ichinose, Takashi Sekiguchi, Hideyo Okushi
• p205 Radiation Induced Lattice Defects in n-MOSFETs and Their Effects on Device Performance   [ 274 K ]
  Authors: K. Kobayashi, H. Ohyama, Masashi Nakabayashi, Eddy Simoen, C. Claeys, Y. Takami, M. Yoneoka, K. Hayama, S. Kohiki
• p211 MC-IR-LST and TEM Combined Analysis of Defects in the OSF-Ring of Cz-Silicon Crystals   [ 702 K ]
  Authors: C. Frigeri, M. Ma, T. Irisawa, Tomoya Ogawa
• p217 An In-Situ Observation of Dislocations and Crystal-Melt Interface during the Melting of Silicon   [ 444 K ]
  Authors: Yuren Wang, Koichi Kakimoto
• p225 Negative Photoconductivity in Polycrystalline Silicon Films Doped with Phosphorus   [ 219 K ]
  Authors: Masashi Nakabayashi, H. Ohyama, Eddy Simoen, M. Ikegami, C. Claeys, K. Kobayashi, M. Yoneoka, Y. Takami, H. Sunaga, H. Takizawa, K. Miyahara